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Silicon Carbide Sputtering Target

ST0227 Silicon Carbide Sputtering Target, SiC

Chemical Formula: SiC
Catalog Number: ST0227
CAS Number: 409-21-2
Purity: 99.5%
Shape: Discs, Plates, Irregular Shaped, Column Targets, Step Targets, Custom-made

Silicon carbide sputtering targets are available in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices. We can do 12″ Diameter SiC targets with stable performance.

Silicon Carbide Sputtering Target

Introduction

The Silicon Carbide (SiC) Sputtering Target from Thin Film Materials (TFM) is a high-performance ceramic material widely used in semiconductors, optoelectronics, protective coatings, and energy devices. Silicon carbide is renowned for its exceptional hardness, wide bandgap, thermal conductivity, and chemical stability, making it a critical material for advanced thin film deposition.

Detailed Description

TFM’s SiC sputtering targets are manufactured with high density, fine grain structure, and purities ranging from 99.9% to 99.99%, ensuring uniform sputtering and stable film composition.

  • Chemical Formula: SiC

  • Appearance: Black to dark gray ceramic solid

  • Density: ~3.21 g/cm³

  • Melting Point: Sublimes above 2,700 °C

  • Crystal Structure: Hexagonal or cubic (polytypes such as 4H-SiC, 6H-SiC)

We provide SiC sputtering targets in standard disc, rectangular, and step target forms. Bonding services with indium or elastomer onto copper or titanium backing plates are available to improve heat dissipation and extend target lifetime. Custom dimensions and polytype selections can also be tailored to specific research or industrial requirements.

Applications

Silicon Carbide sputtering targets are widely applied in:

  • Semiconductor devices: thin films for high-power, high-frequency, and high-temperature electronics

  • Protective coatings: hard coatings with excellent wear and corrosion resistance

  • Optoelectronics: UV photodetectors, LEDs, and optical windows

  • Energy technologies: films for solar cells and thermal management components

  • Research: advanced studies in wide bandgap semiconductors and nanostructured coatings

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Ensures high-quality thin films with minimal contamination
Diameter25 – 150 mm (custom up to 300 mm)Fits most commercial sputtering systems
Thickness3 – 6 mmInfluences sputtering rate and film thickness
Bonding OptionsIndium / ElastomerImproves adhesion, stability, and heat transfer
Backing PlateCopper / TitaniumEnhances structural and thermal performance

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Silicon Carbide (SiC)High hardness, wide bandgap, thermal stabilityPower electronics, hard coatings
Silicon (Si)Cost-effective semiconductorMicroelectronics, photovoltaics
Aluminum Nitride (AlN)Excellent thermal conductivitySubstrates, optoelectronics

FAQ

QuestionAnswer
Can SiC sputtering targets be customized?Yes, TFM provides custom diameters, thicknesses, polytypes, and bonded assemblies.
Do you offer bonding services?Yes, indium and elastomer bonding with Cu/Ti backing plates are available.
How are the targets packaged?Vacuum-sealed, protected with foam, and shipped in export-safe cartons or crates.
Which industries use SiC targets most?Semiconductors, energy, protective coatings, aerospace, and research.

Packaging

Each Silicon Carbide sputtering target is vacuum-sealed and securely packaged to protect against moisture, oxidation, and mechanical damage. Export-ready cartons or wooden crates ensure safe delivery worldwide.

Conclusion

The Silicon Carbide (SiC) Sputtering Target from TFM combines high purity, outstanding hardness, and superior thermal stability, making it an excellent choice for next-generation thin film applications. With customizable specifications and bonding options, our SiC targets provide reliable performance for both R&D and industrial-scale production.

For specifications, pricing, and custom solutions, please contact us at sales@thinfilmmaterials.com

Silicon Carbide Sputtering Target Bonding Services

Specialized bonding services for Silicon Carbide Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Order Now

SiC Target 4N ø50.8*3mm Indium Bonded 3mm Cu B/Plate, SiC target Ø300×6mm with Integrated Step Backing Plate Ø310×6 / Ø300×3mm, SiC target 12"×6.35mm No Bonding, SiC target 12"×6.35mm with 9.525mm No Bonding Oval Shape, SiC target 12"×6.35mm with 9.525mm Bonding Oval Shape, SiC target ø4"×6mm 4N

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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