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ST0185 Silicon Dioxide Sputtering Target, SiO2

Chemical Formula: SiO2
Catalog Number: ST0185
CAS Number: 7631-86-9
Purity: 99.9%, 99.95%, 99.99%, 99.995%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Silicon Dioxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Silicon Dioxide Sputtering Target Description

Oxygen

Silicon

The Silicon Dioxide Sputtering Target from TFM contains silicon (Si) and oxygen (O). Silicon dioxide (SiO2), also known as silica, is a natural compound made from two of the most abundant elements on Earth. SiO2 is commonly found in the form of quartz, which is a major component of the Earth’s crust and is present in a wide variety of rocks. Silicon dioxide occurs naturally in water, plants, animals, and the Earth itself, comprising approximately 59% of the Earth’s crust and forming over 95% of the known rocks. The molecular structure of SiO2 consists of a silicon atom covalently bonded to two oxygen atoms, forming a tetrahedral lattice network.

Silicon Dioxide Sputtering Target Chemical Structure

Silicon Dioxide Sputtering Target Specification

Material TypeSilicon (IV) Oxide
SymbolSiO2
Color/AppearanceWhite, Crystalline Solid
Melting Point (°C)1,610
Boiling Point (°C)2,230
Density (kg/m-3)2,533
SputterRF
Type of BondIndium, Elastomer
CommentsQuartz excellent in E-beam.
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Silicon Dioxide Sputtering Target Bonding Service

Specialized bonding services for Silicon Oxide Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Silicon Dioxide Sputtering Target Packaging

Our Silicon Dioxide Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care to prevent any damage during storage or transportation, ensuring the product remains in optimal condition upon delivery.

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TFM offers Silicon Dioxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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