Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors

ST0185A Silicon Sputtering Target

Silicon Sputtering Target Description

Silicon sputtering targets from TFM are high-purity elemental materials engineered for precision thin film deposition processes such as Physical Vapor Deposition (PVD), including magnetron sputtering. These targets are widely used in the semiconductor, solar, optics, and MEMS industries for the fabrication of advanced microelectronic components.

Silicon (Si) is a chemical element with the atomic number 14, positioned in Group 14 and Period 3 of the periodic table. It is the second most abundant element in the Earth’s crust and is widely valued for its semiconductor properties. Silicon’s symbol “Si” is derived from the Latin word “silex,” meaning flint. It has a relative atomic mass of 28.0855 and exists as a dark gray crystalline solid with a diamond cubic structure.

Silicon is a key material for integrated circuits, solar cells, and various dielectric and passivation layers. When used as a sputtering target, it enables precise and controlled deposition of thin silicon films on substrates such as glass, silicon wafers, and plastics.

Silicon Sputtering Target Specification

PropertyValue
Element SymbolSi
Atomic Number14
Molecular Weight28.09 g/mol
AppearanceGray to dark gray solid
Melting Point1414 °C
Density2.33 g/cm³
Purity99.9%, 99.99%, 99.999% (3N–5N)
Available SizesDia.: 1″, 2″, 3″, 4″, 5″, 6″, 8″
Thick: 0.125″, 0.250″, custom sizes available

Silicon Sputtering Target Handling Notes

  1. Handle with care to prevent contamination; always use clean gloves or tweezers.

  2. Silicon is brittle and should be supported properly during installation to avoid cracking.

  3. For improved sputtering stability, backing plates or elastomer bonding may be applied.

Silicon Sputtering Target Packaging

TFM’s silicon sputtering targets are vacuum-sealed or double-bagged in cleanroom conditions, with all packaging materials clearly labeled for traceability and safe handling. We ensure that each target arrives undamaged and ready for high-performance deposition applications.

Get Contact

TFM offers a wide range of Silicon Sputtering Targets in various sizes, thicknesses, and purities to suit your deposition process. Whether for semiconductor research, solar cell manufacturing, or optical coatings, our silicon targets meet stringent quality standards for density, grain size, and uniformity.
Contact Us to request a quote or inquire about custom compositions and bonding services.

Order Now

Si Target 99.999% ø101.6*6.35mm Indium Bonded 2.54mm Cu B/Plate ø1.23" × 0.062" Keeper with 6-32 Vented Screw

Reviews

There are no reviews yet.

Be the first to review “ST0185A Silicon Sputtering Target”

Your email address will not be published. Required fields are marked *

Related Products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top