Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
tantalum-aluminum-sputtering-target-png

ST0110 Tantalum Aluminum Sputtering Target, Ta/Al

Chemical Formula: Ta/Al
Catalog Number: ST0110
CAS Number: 7440-25-7 | 7429
Purity: 99.9%, 99.95%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tantalum Aluminum sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tantalum Aluminum Sputtering Target Description

The Tantalum Aluminum Sputtering Target from TFM is an alloy material composed of tantalum (Ta) and aluminum (Al). This high-quality sputtering material is designed for applications that benefit from the combined properties of these two elements.

TantalumTantalum, symbolized as “Ta,” is a chemical element named after King Tantalus, the father of Niobe in Greek mythology. It was first mentioned and observed by G. Ekeberg in 1802. Tantalum has an atomic number of 73 and is located in Period 6, Group 5 of the d-block in the periodic table. Its relative atomic mass is 180.94788(2) Daltons, with the number in brackets indicating the measurement uncertainty.

Related Product: Tantalum (Ta) Sputtering Target

AluminumAluminum, also called aluminum, is a chemical element that originated from the Latin name for alum, ‘alumen’ meaning bitter salt. It was first mentioned in 1825 and observed by H.C.Ørsted. The isolation was later accomplished and announced by H.C.Ørsted. “Al” is the canonical chemical symbol of aluminum. Its atomic number in the periodic table of elements is 13 with a location at Period 3 and Group 13, belonging to the p-block. The relative atomic mass of aluminum is 26.9815386(8) Dalton, the number in the brackets indicating the uncertainty.

Related Product: Aluminum (Al) Sputtering Target

Tantalum Aluminum Sputtering Target Packing

Our tantalum aluminum sputter targets are clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.

Get Contact

TFM offers Tantalum Aluminum  Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

Reviews

There are no reviews yet.

Be the first to review “ST0110 Tantalum Aluminum Sputtering Target, Ta/Al”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top