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Tantalum Oxide Sputtering Target

ST0191 Tantalum Oxide Sputtering Target, Ta2O5

Chemical Formula: Ta2O5
Catalog Number: ST0191
CAS Number: 1314-61-0
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tantalum Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tantalum Oxide Sputtering Target Description

Tantalum oxide sputtering target from TFM is an oxide sputtering material containing tantalum (Ta) and oxygen (O).

TantalumTantalum is a chemical element named after King Tantalus, a figure from Greek mythology. It was first mentioned in 1802 and observed by the Swedish chemist Anders Gustaf Ekeberg. The symbol “Ta” is used to represent tantalum in the periodic table, where it has an atomic number of 73. Tantalum is located in Period 6, Group 5, belonging to the d-block. Its relative atomic mass is 180.94788(2) Dalton, with the number in brackets indicating the uncertainty. This metal is known for its high melting point and corrosion resistance, making it valuable in electronics, aerospace, and medical applications.

Related Product: Tantalum Sputtering Target

OxygenOxygen is a chemical element with the symbol “O,” originating from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first documented in 1771 by Carl Wilhelm Scheele, who also accomplished its isolation. Oxygen is the eighth element on the periodic table, located in Period 2 and Group 16, known as the p-block. It has an atomic number of 8 and a relative atomic mass of 15.9994(3) Dalton, with the number in brackets indicating the measurement uncertainty. Oxygen is essential for life on Earth and is a key component in respiration and combustion processes.

Tantalum Oxide Sputtering Target Specification

Compound Formula Ta2O5
Molecular Weight 441.89
Appearance White solid
Melting Point 1,872° C
Density 8.2 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Tantalum Oxide Sputtering Target Handling Notes

  • Indium Bonding is recommended for tantalum oxide sputtering targets. This bonding method is preferred due to the material’s characteristics, such as brittleness and low thermal conductivity, which make it less suitable for sputtering without additional support.
  • This material’s low thermal conductivity makes it susceptible to thermal shock, necessitating careful handling and bonding techniques to maintain integrity during sputtering processes.

Tantalum Oxide Sputtering Target Packaging

Our tantalum oxide sputtering target is clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care to prevent any damage during storage and transportation, ensuring the product arrives in pristine condition.

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TFM offers Tantalum Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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