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ST0252 Terbium Fluoride Sputtering Target, TbF3

Chemical Formula: TbF3
Catalog Number: ST0252
CAS Number: 13708-63-9
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Terbium Fluoride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Terbium Fluoride Sputtering Target Target

The Terbium Fluoride Sputtering Target is a type of fluoride ceramic sputtering target composed of the elements terbium and fluorine. It is designed for use in various thin film deposition processes across different industries.

TerbiumTerbium, symbolized as “Tb,” is a chemical element named after the village of Ytterby in Sweden. It was first identified in 1842 by G. Mosander, who also successfully isolated it. Terbium has an atomic number of 65 and is located in Period 6 and Group 3 of the periodic table, within the f-block. Its relative atomic mass is 158.92535(2) Dalton, with the number in parentheses indicating the uncertainty in the measurement.

 

FluorineFluorine, also known as fluorin, is a chemical element with the symbol “F.” Its name comes from the Latin word ‘fluere,’ meaning to flow. It was first identified by A.-M. Ampère in 1810, with its isolation later achieved and announced by H. Moissan. Fluorine is the ninth element on the periodic table, located in Period 2 and Group 17, and belongs to the p-block. The relative atomic mass of fluorine is 18.9984032(5) Dalton, with the number in brackets indicating the uncertainty of this value.

Terbium Fluoride Sputtering Target Application

The Terbium Fluoride Sputtering Target is utilized in a wide range of applications, including thin film deposition. It is essential in the production of decorative coatings, semiconductors, displays, LEDs, and photovoltaic devices. Additionally, it plays a vital role in functional coatings used in the optical information storage industry. This target is also applied in the glass coating industry, covering automotive and architectural glass, as well as in optical communication technologies.

Terbium Fluoride Sputtering Target Packing

Our Terbium Fluoride Sputter Targets are carefully tagged and labeled on the exterior to ensure precise identification and maintain strict quality control standards. We take extensive precautions to prevent any potential damage during storage or transportation, ensuring the targets arrive in perfect condition.

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TFM offers Terbium Fluoride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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