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Thulium Oxide Sputtering Target

ST0193 Thulium Oxide Sputtering Target, Tm2O3

Chemical Formula: Tm2O3
Catalog Number: ST0193
CAS Number: 12036-44-1
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Thulium Oxide  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Thulium Oxide Sputtering Target Description

Thulium oxide sputtering target from TFM is an oxide sputtering material composed of thulium (Tm) and oxygen (O). This material is used in various applications, particularly in thin film deposition processes, where it serves as a source for creating high-quality thin films in electronics, optics, and other advanced technologies.

Thulium

Thulium is a chemical element named after Thule, an ancient name for Scandinavia. It was first mentioned and observed by T. Cleve in 1879, who also successfully isolated it. Thulium is represented by the symbol “Tm” in the periodic table and has an atomic number of 69. It is positioned in Period 6, Group 3, within the f-block. The relative atomic mass of thulium is 168.93421(2) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: Thulium Sputtering Target

OxygenOxygen is a chemical element derived from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first identified in 1771 by the chemist W. Scheele, who also achieved its isolation. The chemical symbol for oxygen is “O,” and it is found in the periodic table at atomic number 8, positioned in Period 2 and Group 16, within the p-block. The relative atomic mass of oxygen is 15.9994(3) Dalton, with the number in brackets reflecting the uncertainty of the measurement.

Thulium Oxide Sputtering Target Specification

Compound Formula Tm2O3
Appearance White
Melting Point 2,341° C
Density 8600 kg/m3

Thulium Oxide Sputtering Target Packaging

Our Thulium Oxide Sputtering Target is meticulously tagged and labeled on the exterior to facilitate easy identification and ensure rigorous quality control. We take extensive precautions during storage and transportation to prevent any potential damage, thereby maintaining the high quality of our product.

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TFM offers Thulium Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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Tm2O3 4N ø4” * 2mm Bonded 3mm Cu B/Plate, Tm2O3 4N ø2” * 2mm Bonded 3mm Cu B/Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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