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ST0939 Thulium Telluride Sputtering Target, TmTe

Chemical FormulaTmTe
Catalog No.ST0939
CAS Number12040-14-1
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Thulium Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Thulium Telluride Sputtering Target Description

Thulium Telluride Sputtering Target is a significant semiconductor material composed of the rare earth element thulium and the non-metallic element tellurium. It is primarily utilized in thin film deposition processes, which are critical for semiconductor preparation and advanced research.

The unique crystal structure and electrical properties of thulium telluride make it highly valuable in the semiconductor industry. Its semiconducting nature positions it as an ideal material for applications in electronics, optoelectronics, and other high-tech fields. Key properties such as electrical conductivity and bandgap contribute to its suitability in the development of various electronic devices, making it an essential material for cutting-edge technology.

Related Product: Thulium Sputtering Target, Thulium Oxide Sputtering Target

Thulium Telluride Sputtering Target Specifications

Compound FormulaTmTe
Molecular Weight296.53
AppearanceBlack Target
Melting Point–
Density9.36 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Thulium Telluride Sputtering Target Handling Notes

Indium bonding is recommended for the Thulium Telluride Sputtering Target because of its challenging characteristics, such as brittleness and low thermal conductivity, which can affect sputtering performance. The material’s low thermal conductivity and susceptibility to thermal shock make indium bonding particularly useful for enhancing stability and ensuring effective sputtering.

Thulium Telluride Sputtering Target Application

Thulium Telluride Sputtering Targets are valuable in the field of optoelectronics due to their unique combination of optical and electrical properties. This makes them ideal for researching and developing advanced optoelectronic devices. Additionally, these targets have potential applications in the study and creation of magnetic materials, including the development of magnetic sensors.

As a semiconductor material, Thulium Telluride is also used to fabricate a variety of semiconductor devices. Its ability to exhibit thermoelectric effects under temperature differences makes it suitable for use in thermoelectric materials, which are employed in energy conversion and temperature difference sensors.

Thulium Telluride Sputtering Target Packaging

Our Thulium Telluride Sputtering Target is meticulously handled throughout storage and transportation to ensure that it maintains its original quality and condition. We take every precaution to preserve the integrity of our products, guaranteeing that they arrive in optimal condition for your use.

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TFM offers Thulium Telluride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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