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Tin Antimonide Sputtering Target

ST0943 Tin Antimonide Sputtering Target, SnSb

Chemical FormulaSnSb
Catalog No.ST0943
CAS Number28980-49-6
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Tin Antimonide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Tin Antimonide Sputtering Target

Introduction

The Tin Antimonide Sputtering Target (SnSb) is a specialized alloy target designed for thin film deposition in semiconductors, optoelectronics, and energy storage devices. By combining tin’s ductility and conductivity with antimony’s semimetallic properties, this material provides unique electrical and structural characteristics, making it suitable for next-generation thin films in microelectronics, phase-change memory, and anode materials for lithium-ion batteries.

Detailed Description

Tin Antimonide sputtering targets are manufactured through vacuum melting or powder metallurgy (HIP or hot pressing) to ensure high density and homogeneity. The alloy is typically available in standard or custom compositions, such as SnSb (eutectic ~64% Sn, 36% Sb), though ratios can be tailored to meet specific thin film requirements.

Key features include:

  • High Purity (≥99.9%): Ensures reliable thin film deposition without contamination.

  • Stable Alloy Properties: Maintains uniformity during sputtering, producing films with consistent electrical and optical characteristics.

  • Good Electrical Conductivity: Suitable for electronic and optoelectronic applications.

  • Electrochemical Activity: Well-studied as an anode material for advanced batteries.

  • Custom Sizes & Bonding: Available with copper or titanium backing plates for improved thermal stability.

Applications

The Tin Antimonide Sputtering Target is used in a variety of advanced applications:

  • Semiconductors & Microelectronics: Functional layers for memory storage and integrated circuits.

  • Phase-Change Materials: Thin films for data storage devices (non-volatile memory).

  • Optoelectronics: Films for infrared detectors and thermoelectric devices.

  • Energy Storage: Thin film anodes in lithium-ion and sodium-ion batteries.

  • Research & Development: Material science studies and experimental thin film technologies.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%High purity ensures film quality
CompositionSnSb (customizable ratio)Ratio influences electrical & electrochemical performance
Diameter25 – 300 mm (customizable)Matches magnetron sputtering systems
Thickness3 – 6 mmAffects sputtering rate and film uniformity
BondingCopper / Titanium backingImproves heat transfer & mechanical strength

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Tin Antimonide (SnSb)Balanced electrical & electrochemical propertiesMemory storage, anodes
Pure Tin (Sn)Good conductivity, ductileSoldering, coatings
Pure Antimony (Sb)High carrier mobility, semimetallicIR detectors, thermoelectrics

FAQ

QuestionAnswer
Can the Sn:Sb ratio be customized?Yes, alloy composition can be tailored for different research or industrial needs.
How is it packaged?Each target is vacuum-sealed or argon-protected, with protective foam and export-safe cartons.
What is the delivery time?Typically 3–4 weeks depending on size and customization.
Is bonding required?For larger diameter targets, bonding to copper or titanium backing is recommended.
Which industries use it most?Semiconductor, optoelectronics, memory devices, and energy storage.

Packaging

Tin Antimonide Sputtering Targets are carefully sealed under vacuum or inert gas to prevent oxidation. Each unit is labeled with detailed specifications (purity, composition, dimensions, lot number) to ensure traceability. Protective foam and strong cartons or wooden crates are used for secure international shipping.

Conclusion

The Tin Antimonide Sputtering Target provides a reliable material for thin film deposition in advanced electronics, optics, and energy storage devices. Its tunable alloy composition and excellent electrical properties make it an ideal choice for next-generation research and industrial applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Related Product: Tin Zinc Sputtering Target, Indium Tin Sputtering Target

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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