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Tin Arsenide Sputtering Target

ST0949 Tin Arsenide Sputtering Target, SnAs

Chemical FormulaSnAs
Catalog No.ST0949
CAS Number39332-13-3
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Tin Arsenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tin Arsenide Sputtering Target Description

Tin Arsenide Sputtering Targets, meticulously crafted by TFM, are derived from high-purity Tin Arsenide (SnAs) through precise processing, ensuring fine quality. These targets exhibit exceptional properties, making them suitable for deployment in chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. The resulting thin films demonstrate excellent performance.

Tin Arsenide (SnAs) stands out as a semiconductor material, finding applications in the realm of electronics and semiconductor devices. With a direct energy gap, Tin Arsenide requires relatively small amounts of energy for electron and hole transitions, rendering it advantageous for select applications in optoelectronics.

Related Product: Tin Zinc Sputtering Target, Indium Tin Sputtering Target

Tin Arsenide Sputtering Target Specifications

Compound FormulaSnAs
Molecular Weight193.61
AppearanceSilver Grey Target
Melting Point579 °C
Density–
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Tin Arsenide Sputtering Target Handling Notes

Indium bonding is recommended for Tin Arsenide Sputtering Targets due to characteristics like brittleness and low thermal conductivity, which make the material less amenable to sputtering. Tin Arsenide has low thermal conductivity and is susceptible to thermal shock.

Tin Arsenide Sputtering Target Application

Tin Arsenide Sputtering Targets have versatile applications in sputter deposition processes, especially for fabricating semiconductor devices such as thin film transistors (TFTs) and integrated circuit components. Their semiconductor properties make them valuable for creating optoelectronic devices, including photodetectors and lasers. The adaptability of Tin Arsenide Sputtering Targets highlights their importance in semiconductor technology and optoelectronics.

Tin Arsenide Sputtering Target Packaging

Our Tin Arsenide Sputtering Target is carefully handled during storage and transportation to ensure that the quality of our products remains in their original condition.

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TFM offers Tin Arsenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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