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Titanium Aluminum Boride Sputtering Target, TiAlB₂

Titanium Aluminum Boride Sputtering Target, TiAlB₂

Introduction to Titanium Aluminum Boride (TiAlB₂) Sputtering Target

The Titanium Aluminum Boride (TiAlB₂) Sputtering Target is an advanced ceramic–metal composite target material designed for thin-film deposition. With a unique combination of titanium (Ti), aluminum (Al), and boron (B), this compound belongs to the family of complex borides, offering superior mechanical strength, excellent chemical stability, and multifunctional properties. It is widely used in the fabrication of hard, wear-resistant, and conductive films in both industrial and research applications.

Material Structure and Properties

  • Crystal Structure: TiAlB₂ is a layered ceramic compound where boron atoms form strong covalent bonds with Ti and Al, creating a highly stable lattice.

  • High Hardness: The presence of borides contributes to ultra-high hardness and excellent wear resistance.

  • Thermal & Oxidation Resistance: Ti and Al oxides form a protective barrier on the surface, making the compound resistant to high-temperature oxidation.

  • Electrical Conductivity: Unlike many ceramics, borides show relatively good conductivity, allowing efficient sputtering with both RF and DC power supplies.

Key Features of TiAlB₂ Sputtering Target

  • High Purity: Manufactured with purities up to 99.5–99.9% to minimize contamination in deposited films.

  • Excellent Film Uniformity: Ensures smooth, dense thin films with strong adhesion to substrates.

  • Versatile Deposition: Compatible with RF magnetron sputtering, DC sputtering, and pulsed laser deposition (PLD).

  • Mechanical Durability: Exhibits resistance to cracking during sputtering due to strong ceramic-metal bonding.

Applications

TiAlB₂ sputtering targets are highly valued in advanced engineering and coating technologies, including:

  1. Hard Protective Coatings – Deposition of ultra-hard, wear-resistant films for cutting tools, dies, and mechanical components.

  2. Electronics and Semiconductor Devices – Thin conductive barrier layers, interconnects, and diffusion-resistant coatings.

  3. Aerospace & Automotive Components – Oxidation- and wear-resistant films for turbines, pistons, and high-stress environments.

  4. Optical & Decorative Coatings – Provides films with unique reflectivity and surface hardness.

  5. Research Applications – For developing multifunctional ceramic-metal films with tunable mechanical and electrical properties.

Fabrication & Deposition

  • Target Production: TiAlB₂ sputtering targets are typically produced through hot-pressing or high-temperature sintering methods, achieving high density (>95% theoretical).

  • Film Characteristics: Deposited films exhibit excellent hardness, chemical inertness, and thermal stability. Depending on the sputtering parameters, films can also show tunable electrical conductivity and optical reflectivity.

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TiAlB₂ target (Ti/Al/B = 1/1/2 at%) 99.95% ø50.8×3mm, TiAlB₂ target (Ti/Al/B = 1/1/2 at%) 99.95% ø50.8×5mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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