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ST0268 Titanium Silicide Sputtering Target, TiSi2

Chemical Formula: TiSi2
Catalog Number: ST0268
CAS Number: 12039-83-7
Purity: >99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Titanium Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Titanium Silicide Sputtering Target Description

Titanium silicide sputtering target is a silicide ceramic sputtering material composed of titanium and silicon. This material is commonly used in various applications, particularly in thin film deposition processes. The combination of titanium and silicon in the target allows for the creation of films with desirable properties for use in the semiconductor, display, and photovoltaic industries, among others.

TitaniumTitanium is a chemical element named after the Titans of Greek mythology, symbolizing strength. It was first discovered in 1791 by William Gregor, with its isolation and identification as a unique element later confirmed by Jöns Jakob Berzelius. The chemical symbol for titanium is “Ti,” and it is located in Period 4, Group 4 of the periodic table, classified within the d-block. Titanium has an atomic number of 22 and a relative atomic mass of 47.867(1) Dalton, with the number in brackets indicating the uncertainty in its measurement.

Related Product: Titanium Sputtering Target

SiliconSilicon is a chemical element named after the Latin word ‘silex’ or ‘silicis,’ meaning flint. It was first described in 1824 by Jöns Jakob Berzelius, who also achieved its isolation. The chemical symbol for silicon is “Si,” and it is found in Period 3 and Group 14 of the periodic table, part of the p-block. Silicon has an atomic number of 14, and its relative atomic mass is 28.0855(3) Dalton, with the number in brackets indicating the measurement’s uncertainty.

Titanium Silicide Sputtering Target Application

The titanium silicide sputtering target is utilized in various applications, including thin film deposition, decorative coatings, and the production of semiconductor components. It is commonly used in displays, LED devices, photovoltaic cells, and functional coatings. Additionally, it finds applications in the optical information storage industry, glass coatings for automotive and architectural uses, and optical communication systems.

Titanium Silicide Sputtering Target Packing

Our titanium silicide sputter targets are meticulously tagged and labeled externally to ensure easy identification and maintain stringent quality control. We take special precautions to protect these targets from damage during storage and transportation, ensuring they arrive in perfect condition.

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TFM offers Titanium Silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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