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ST0117 Titanium Tungsten Sputtering Target, Ti/W

Chemical Formula: Ti/W
Catalog Number: ST0117
CAS Number: 58397-70-9
Purity: 99.9%, 99.95%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Titanium Tungsten sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Titanium Tungsten Sputtering Target (Ti/W) is a widely used alloy target in thin film deposition processes such as magnetron sputtering and other physical vapor deposition (PVD) techniques. This alloy combines the excellent adhesion properties of titanium with the high density, thermal stability, and corrosion resistance of tungsten. As a result, Ti/W thin films are commonly employed as barrier layers, adhesion layers, and protective coatings in semiconductor manufacturing and advanced electronic devices.

Ti/W sputtering targets are especially important in integrated circuit fabrication, where thin films must provide reliable electrical performance while preventing metal diffusion between layers. The Ti/W alloy has become a standard material for diffusion barrier applications in microelectronics due to its stability and compatibility with various deposition systems.

Detailed Description

Titanium Tungsten (Ti/W) sputtering targets are manufactured from carefully controlled alloy compositions, typically containing tungsten as the primary component with a smaller percentage of titanium (commonly around Ti10W90 or Ti20W80 by weight). This composition provides an optimal balance between tungsten’s excellent barrier properties and titanium’s ability to improve adhesion to substrates such as silicon, silicon dioxide, and other semiconductor materials.

The manufacturing process generally involves vacuum melting or powder metallurgy techniques followed by hot pressing or hot isostatic pressing (HIP) to achieve a dense and homogeneous alloy structure. A uniform microstructure is essential for ensuring stable sputtering performance, minimizing particle generation, and maintaining consistent deposition rates across the substrate.

One of the most important characteristics of Ti/W thin films is their ability to function as an effective diffusion barrier. In semiconductor devices, these films prevent metal atoms—such as copper or aluminum—from diffusing into surrounding layers, which could otherwise degrade device performance. Ti/W films also exhibit excellent adhesion and good electrical conductivity, making them ideal for multilayer thin film structures.

For high-power sputtering systems, Titanium Tungsten targets are frequently bonded to copper backing plates using indium bonding or diffusion bonding techniques. These bonding methods improve heat dissipation and mechanical stability, allowing the targets to operate reliably during long deposition runs.

High-purity Ti/W targets are particularly important for semiconductor fabrication, where even trace impurities can affect thin film performance and device reliability.

Applications

Titanium Tungsten Sputtering Targets are widely used in advanced electronic and thin film applications, including:

  • Semiconductor device fabrication – Diffusion barrier layers in integrated circuits

  • Adhesion layers between metal films and semiconductor substrates

  • Thin film resistors and electronic components

  • Microelectromechanical systems (MEMS) requiring stable conductive coatings

  • Protective coatings with high thermal and chemical stability

  • Advanced research and development in thin film electronics and materials science

These applications benefit from the excellent thermal stability and barrier properties of Ti/W alloy films.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Reduces contamination and improves thin film quality
Composition RatioTi/W customizable (e.g., 10/90, 20/80)Determines adhesion and barrier performance
Density≥ 99% theoretical densityEnsures stable sputtering and uniform deposition
Diameter25 – 300 mm (custom)Compatible with most sputtering systems
Thickness3 – 6 mmInfluences target lifetime and sputtering rate
BondingCopper backing plate optionalImproves thermal conductivity and mechanical stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Titanium Tungsten (Ti/W)Excellent diffusion barrier and adhesionSemiconductor barrier layers
Titanium (Ti)Strong adhesion to many substratesAdhesion layers in thin films
Tungsten (W)High melting point and densityHigh-temperature coatings
Tantalum (Ta)Effective diffusion barrier for copperSemiconductor interconnect structures

FAQ

QuestionAnswer
Can the Titanium Tungsten Sputtering Target be customized?Yes, the Ti/W composition ratio, target size, thickness, purity, and bonding options can all be customized.
What is the most common Ti/W composition?One of the most commonly used compositions is Ti10W90, which offers excellent diffusion barrier performance and adhesion.
Do Ti/W targets require backing plates?For high-power sputtering systems, copper backing plates are recommended to improve heat dissipation and prevent thermal stress.
Which deposition methods are suitable for Ti/W targets?Titanium Tungsten targets are typically used in DC magnetron sputtering and RF sputtering systems.
Which industries commonly use Ti/W sputtering targets?Semiconductor manufacturing, MEMS fabrication, electronics production, and advanced materials research.

Packaging

Our Titanium Tungsten Sputtering Target are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

Conclusion

Titanium Tungsten Sputtering Targets are an essential material for depositing thin films that require strong adhesion, high thermal stability, and effective diffusion barrier properties. Their proven reliability in semiconductor fabrication makes them a standard choice for integrated circuits and advanced electronic devices.

With customizable alloy compositions, high purity levels, and robust bonding options, Ti/W sputtering targets are designed to meet the demanding requirements of modern vacuum deposition systems.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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