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ST0288 Tungsten Disulfide Sputtering Target, WS2

Chemical Formula: WS2
Catalog Number: ST0288
CAS Number: 12138-09-9
Purity: >99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tungsten Disulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tungsten Disulfide Sputtering Target Description

Tungsten disulfide sputtering target is a type of sulfide ceramic sputtering target composed of tungsten and sulfur. This material is known for its lubricating properties and is used in various high-temperature and high-pressure applications. Tungsten disulfide (WS₂) exhibits excellent lubricity, low friction, and good thermal stability, making it valuable in thin film deposition processes, particularly in the semiconductor, aerospace, and automotive industries. It is also used in the production of coatings that reduce wear and friction in mechanical components. 

Tungsten

Tungsten, also known as wolfram (symbol “W”), is a chemical element that originated from the Swedish words ‘tung sten,’ meaning heavy stone. This name reflects the mineral wolframite, from which tungsten was historically extracted. The element was first mentioned in 1781 and observed by the Swedish chemist T. Bergman. The isolation of tungsten was later accomplished and announced by the brothers Juan and Fausto Elhuyar. Tungsten has an atomic number of 74, placing it in Period 6 and Group 6 of the periodic table, within the d-block. Its relative atomic mass is 183.84(1) Dalton, with the number in brackets indicating the uncertainty in the measurement.

Related Product: Tungsten Sputtering Target

SulfurSulfur, also spelled sulphur, is a chemical element that has its origins either from the Sanskrit word ‘sulvere’ or the Latin ‘sulfurium,’ both of which are names for sulfur. This element has been known and used since before 2000 BC, with early discovery attributed to ancient Chinese and Indian civilizations. The canonical chemical symbol for sulfur is “S.” It is positioned at atomic number 16 in the periodic table, located in Period 3 and Group 16, which is part of the p-block. The relative atomic mass of sulfur is 32.065(5) Dalton, with the number in brackets representing the uncertainty in this value.

Tungsten Disulfide Sputtering Target Specification

Compound FormulaWS2
AppearanceDark Gray, Crystalline Solid
Melting Point1,250°C
Density7.5 g/cm3
Bonding MethodIndium, Elastomer
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Tungsten Disulfide Sputtering Target Bonding Service

Specialized bonding services for Tungsten Disulfide Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Tungsten Disulfide Sputtering Target Application

The Tungsten Disulfide sputtering target is utilized in various applications, including thin film deposition, decoration, and semiconductor processes. It is particularly valuable in the production of displays, LEDs, and photovoltaic devices. This material is also used for functional coatings, optical information storage, and glass coating industries, such as those for car and architectural glass. Additionally, it finds application in optical communication technologies.

Tungsten Disulfide Sputtering Target Packing

Our tungsten disulfide sputtering targets are clearly tagged and labeled on the exterior to facilitate easy identification and maintain quality standards. We meticulously ensure these targets are handled with the utmost care to prevent any potential damage during storage and transportation.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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