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Tungsten Hafnium Carbide Sputtering Target

Tungsten Hafnium Carbide Sputtering Target, WHfC

Tungsten Hafnium Carbide Sputtering Target (WHfC)

Introduction

The Tungsten Hafnium Carbide (WHfC) Sputtering Target is a high-performance ceramic material designed for thin film deposition under extreme conditions. Combining the exceptional hardness and thermal stability of tungsten carbide with the oxidation resistance and toughness of hafnium carbide, WHfC offers superior film quality and reliability. This makes it a preferred choice for industries requiring protective, wear-resistant, and functional coatings.

Detailed Description

WHfC belongs to the family of ultra-high temperature ceramics (UHTCs). With melting points exceeding 3800 °C and strong resistance to thermal shock, it is particularly suited for sputtering environments involving high power and long deposition cycles.

Manufactured via hot pressing or vacuum sintering, the WHfC sputtering target achieves:

  • High density (>95% theoretical) for consistent sputtering performance.

  • Fine-grain microstructure minimizing particle ejection and defects.

  • Customizable dimensions and backing to suit a wide range of sputtering systems.

Its combined tungsten–hafnium carbide composition ensures hardness, oxidation resistance, and superior thermal conductivity compared to single-carbide targets.

Applications

WHfC sputtering targets are widely used in:

  • Semiconductors – diffusion barriers and advanced device coatings.

  • Optical coatings – durable protective films for sensors and lenses.

  • Cutting tools and wear parts – hard, oxidation-resistant thin films.

  • Aerospace – coatings for turbine and re-entry components.

  • Energy systems – protective coatings in nuclear and high-temperature energy devices.

  • R&D – development of next-generation UHTC thin films.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.5% – 99.9%Ensures low contamination in thin films
Density≥ 95% theoreticalImproves film uniformity and durability
Diameter25 – 300 mm (custom)Fits various sputtering systems
Thickness3 – 10 mmBalances target life and sputtering rate
Backing PlateCopper / MolybdenumEnhances thermal conductivity and stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
WHfC (Tungsten Hafnium Carbide)Balance of hardness, toughness, and oxidation resistanceAerospace & wear-resistant coatings
WC (Tungsten Carbide)Extreme hardness, cost-effectiveCutting tools
HfC (Hafnium Carbide)Ultra-high melting pointThermal protection & aerospace
Ta₄HfC₅ (Tantalum Hafnium Carbide)One of the highest melting points knownUltra-high temperature coatings

FAQ

QuestionAnswer
Can WHfC targets be customized?Yes, size, thickness, purity, and backing can be tailored.
What bonding options are available?Copper or molybdenum plates are commonly used.
How is it packaged?Vacuum-sealed, foam-protected, and shipped in export-safe crates.
Is it suitable for high-temperature use?Yes, WHfC is designed for ultra-high temperature coatings.
Which industries use WHfC most?Semiconductor, aerospace, optics, energy, and R&D.

Packaging

Each Tungsten Hafnium Carbide Sputtering Target is carefully vacuum-packed, labeled for traceability, and cushioned with protective foam. Strong cartons or wooden crates are used for secure shipping worldwide.

Conclusion

The WHfC sputtering target combines the superior hardness of tungsten carbide with the stability of hafnium carbide, making it a top-tier material for demanding thin film applications. Its adaptability and high performance ensure consistent results in research and industry.

For detailed specifications or a quotation, please contact us at [sales@thinfilmmaterials.com].

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WHfC target 3N ø30×3mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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