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ST0199 Tungsten Oxide Sputtering Target, WO3

Chemical Formula: WO3
Catalog Number: ST0199
CAS Number: 1314-35-8
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tungsten Oxide  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tungsten Oxide Sputtering Target Description

Tungsten oxide (WO₃) sputtering targets from TFM are high-purity oxide materials commonly used in various applications. This compound, also known as tungsten trioxide, is characterized by its unique properties, including high density and melting point, making it suitable for thin film deposition in coatings, electronics, and other specialized industries.

TungstenTungsten, also known as wolfram, is a chemical element with the symbol “W” and atomic number 74. The name “wolfram” comes from the mineral wolframite, reflecting its historical name. The element’s modern name, “tungsten,” originates from the Swedish words “tung sten,” meaning “heavy stone,” indicative of its high density. Tungsten was first identified in 1781 by Carl Wilhelm Scheele, with its isolation later achieved by brothers Juan José and Fausto Elhuyar. It is located in Period 6, Group 6 of the periodic table and belongs to the d-block. The relative atomic mass of tungsten is approximately 183.84 Daltons, with the number in parentheses indicating measurement uncertainty.

Related Product: Tungsten Sputtering Target

OxygenOxygen, a chemical element with the symbol “O” and atomic number 8, is a crucial component of the Earth’s atmosphere and is essential for most forms of life. The name “oxygen” comes from the Greek words “oxy” and “genes,” meaning “acid-forming.” It was first identified and isolated by Carl Wilhelm Scheele in 1771, although Joseph Priestley is also credited with its discovery in 1774. Oxygen is located in Period 2, Group 16 of the periodic table, within the p-block. Its relative atomic mass is approximately 15.9994 Daltons, with the figure in brackets indicating the uncertainty in this measurement.

Tungsten Oxide Sputtering Target Specification

Compound FormulaWO3
Molecular Weight231.84
AppearanceYellow to Green
Melting Point1473 °C
Density7.16 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Tungsten Oxide Sputtering Target Packaging

Our tungsten oxide sputtering target is meticulously tagged and labeled on the exterior to ensure accurate identification and maintain strict quality control. We take extensive precautions during storage and transportation to prevent any potential damage, preserving the integrity and quality of the product.

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TFM offers Tungsten Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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