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ST0269 Tungsten Silicide Sputtering Target, WSi2

Chemical Formula: WSi2
Catalog Number: ST0269
CAS Number: 12039-88-2
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

 Tungsten Silicide  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tungsten Silicide Sputtering Target Description

A tungsten silicide sputtering target is a type of ceramic sputtering target composed of tungsten (W) and silicon (Si). This material is commonly used in the semiconductor industry and for various thin film deposition processes.

TungstenSilicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with a location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.

Related Product: Tungsten Sputtering Target

SiliconSilicon is a chemical element that derives its name from the Latin word ‘silex’ or ‘silicis,’ meaning flint. It was first identified in 1824 by the chemist Jöns Jakob Berzelius. The isolation and formal announcement of silicon as a distinct element were also credited to Berzelius. Represented by the symbol “Si,” silicon has an atomic number of 14, placing it in Period 3 and Group 14 of the periodic table, within the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, where the number in parentheses denotes the uncertainty.

Tungsten Silicide Sputtering Target Application

The tungsten silicide sputtering target is utilized in various applications, including thin film deposition, decorative coatings, semiconductors, displays, LEDs, and photovoltaic devices. It also plays a crucial role in functional coatings for optical information storage industries and is used in glass coatings for car and architectural glass, as well as in optical communication technologies.

Tungsten Silicide Sputtering Target Packing

Our tungsten silicide sputter targets are carefully tagged and labeled for easy identification and stringent quality control. We take meticulous precautions to prevent any damage during storage and transportation, ensuring that the product arrives in perfect condition and meets the highest standards of quality.

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TFM offers Tungsten Silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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