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ST0231 Vanadium Carbide Sputtering Target, VC

Chemical Formula: VC
Catalog Number: ST0231
CAS Number: 12070-10-9
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Vanadium Carbide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Vanadium Carbide Sputtering Target Description

Vanadium Carbide sputtering target from TFM is a high-quality carbide ceramic material with the chemical formula VC. This target is commonly used in various thin film deposition processes, offering excellent hardness and wear resistance properties, making it ideal for applications in the semiconductor, display, LED, and photovoltaic industries.

Vanadium is a chemical element with the symbol “V,” named after Vanadis, an old Norse name for the goddess Freyja. It was first identified in 1801 by the scientist M. del Río and later isolated by N.G. Sefström. Vanadium’s atomic number is 23, and it is positioned in Period 4, Group 5 of the periodic table, belonging to the d-block. The relative atomic mass of vanadium is 50.9415(1) Dalton, with the number in brackets indicating the uncertainty of the measurement.

Related Product: Vanadium Sputtering Target

CarbonCarbon is a chemical element with the symbol “C,” originating from the Latin word ‘carbo,’ meaning charcoal. It has been known and used since approximately 3750 BC, with early uses by Egyptians and Sumerians. Carbon holds the atomic number 6 in the periodic table, located at Period 2 and Group 14 within the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, with the number in brackets indicating the uncertainty of the measurement.

Vanadium Carbide Sputtering Target Handling Notes

1. Indium bonding is recommended for vanadium carbide sputtering targets due to their inherent brittleness and low thermal conductivity, which are characteristics that can pose challenges during the sputtering process.

2. This material’s low thermal conductivity makes it susceptible to thermal shock, necessitating careful handling and appropriate bonding techniques to ensure stable and effective sputtering performance.

Vanadium Carbide Sputtering Target Packaging

Our Vanadium Carbide Sputtering Targets are meticulously tagged and labeled externally to ensure easy identification and stringent quality control. We take great care in handling and packaging these targets to prevent any potential damage during storage or transportation, ensuring the products arrive in pristine condition.

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TFM offers Vanadium Carbide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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