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Yttrium Barium Copper Oxide Sputtering Target, YBa₂Cu₃O₇

Yttrium Barium Copper Oxide Sputtering Target (YBa₂Cu₃O₇)

Introduction

The Yttrium Barium Copper Oxide (YBa₂Cu₃O₇) Sputtering Target—commonly known as YBCO—is a high-temperature superconducting (HTS) material used to deposit thin films with zero electrical resistance and strong diamagnetic properties. Since its discovery, YBCO has played a vital role in the development of superconducting electronics, quantum devices, and energy-efficient systems.

Detailed Description

YBa₂Cu₃O₇ is a perovskite-type oxide that exhibits superconductivity above 90 K, allowing operation using liquid nitrogen cooling instead of liquid helium. It is highly anisotropic, meaning its superconducting properties depend strongly on crystal orientation.

The YBCO sputtering target is typically produced by high-purity powder synthesis followed by cold isostatic pressing (CIP) and sintering at high temperatures to achieve dense and homogeneous ceramics. Controlled stoichiometry (Y:Ba:Cu = 1:2:3) is critical for achieving the desired superconducting phase and maintaining film quality.

Key Features:

  • Superconducting transition temperature (Tc) ≈ 90 K.

  • High current density and low surface resistance.

  • Excellent phase purity and uniform oxygen stoichiometry.

  • Smooth, dense films with excellent adhesion and crystallinity.

  • Compatible with RF magnetron sputtering and pulsed laser deposition (PLD).

Applications

YBa₂Cu₃O₇ sputtering targets are widely used in:

  • Superconducting thin films – for Josephson junctions and quantum interference devices (SQUIDs).

  • Microwave and RF components – low-loss filters and resonators.

  • Magnetic sensors – for ultra-sensitive detection and measurement.

  • Power electronics – superconducting cables and fault-current limiters.

  • Research & development – in superconductivity, cryogenic systems, and quantum computing.

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaYBa₂Cu₃O₇₋ₓDefines superconducting phase
Purity99.9% – 99.99%Reduces impurities affecting Tc
Density≥ 95% theoreticalImproves sputtering stability
Diameter25 – 200 mm (custom)Fits standard sputtering systems
Thickness3 – 10 mmBalances film uniformity and target lifetime
Backing PlateCopper / MolybdenumEnhances heat transfer and structural support

Comparison with Related Materials

MaterialKey AdvantageTypical Application
YBa₂Cu₃O₇ (YBCO)High Tc, superconducting above 90 KHTS thin films & devices
Bi₂Sr₂CaCu₂O₈ (BSCCO)Layered structure, flexible fabricationSuperconducting tapes
MgB₂Simpler structure, Tc ≈ 39 KBulk superconductors
NbTiHigh current-carrying capacityLow-temperature superconductors

FAQ

QuestionAnswer
What sputtering method is recommended for YBCO?RF magnetron sputtering or PLD with post-annealing in oxygen.
Can YBCO targets be customized?Yes, diameter, thickness, and stoichiometry can be tailored.
What purity is standard?99.9% (3N) to 99.99% (4N) for research-grade applications.
How is oxygen content controlled?Through annealing and controlled cooling during synthesis.
How are the targets packaged?Vacuum-sealed, desiccant-protected, and shipped in wooden crates.

Packaging

Each YBa₂Cu₃O₇ Sputtering Target is vacuum-sealed in an inert atmosphere to prevent moisture and oxygen loss. Foam cushioning and export-grade cartons ensure protection from mechanical shock during transport.

Conclusion

The YBa₂Cu₃O₇ sputtering target enables deposition of high-quality superconducting thin films with exceptional electrical and magnetic properties. Its precise stoichiometry, phase purity, and reliable sputtering behavior make it a key material for the advancement of superconducting electronics and next-generation quantum technologies.

For detailed specifications and quotations, please contact us at [sales@thinfilmmaterials.com].

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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