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ST0944 Zinc Antimonide Sputtering Target, ZnSb

Chemical FormulaZnSb
Catalog No.ST0944
CAS Number12039-35-9
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Zinc Antimonide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Zinc Antimonide Sputtering Target Description

Zinc Antimonide Sputtering Targets from TFM are renowned for their high quality and exceptional purity. Ideal for thin film deposition techniques like Physical Vapor Deposition (PVD) and Magnetron Sputtering, these targets ensure the production of films with outstanding properties. Due to its excellent electrical conductivity, Zinc Antimonide is extensively used in electronic devices. Moreover, Zinc Antimonide thin-film thermoelectric materials are valued for their safety, non-toxicity, simple structure, abundant raw material availability, and excellent thermal stability. As a result, they are recognized as promising thermoelectric materials with significant application potential.

Related Product: Zinc Sputtering Target, Tin Zinc Sputtering Target

Zinc Antimonide Sputtering Target Specifications

Compound FormulaZnSb
Molecular Weight187.17
AppearanceSilver Grey Target
Melting Point–
Density         6.33 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Zinc Antimonide Sputtering Target Handling Notes

Indium bonding is advised for Zinc Antimonide Sputtering Targets due to the material’s characteristics that can complicate the sputtering process, such as brittleness and low thermal conductivity. Zinc Antimonide has low thermal conductivity and is prone to thermal shock, making indium bonding a suitable choice to mitigate these issues and ensure reliable performance during the sputtering process.

Zinc Antimonide Sputtering Target Application

Zinc Antimonide thin films, derived from Zinc Antimonide Sputtering Targets, are increasingly significant in the field of thermoelectrics due to their exceptional ability to convert thermal energy into electrical energy. As environmentally friendly materials, Zinc Antimonide offers a direct approach to harnessing and transforming heat into electricity. This capability supports a variety of applications, such as:

  • Thermoelectric Power Generation: Efficiently converting heat from industrial processes or waste heat into electrical power.
  • Semiconductor Refrigeration: Providing cooling solutions in electronic devices through the thermoelectric effect.
  • Sensor Technology: Enhancing the performance of sensors by converting temperature variations into electrical signals.

Zinc Antimonide’s thermoelectric properties contribute to increased sustainability and energy efficiency, making it a valuable material in advanced technology and green energy solutions.

Zinc Antimonide Sputtering Target Packaging

Our Zinc Antimonide Sputtering Target is meticulously handled during storage and transportation to ensure that the quality of the product is maintained in its original condition.

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TFM offers Zinc Antimonide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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