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Zinc Indium Sulfide Sputtering Target, ZnIn2S4

Introduction

The Zinc Indium Sulfide Sputtering Target (ZnIn₂S₄) is a ternary chalcogenide material widely used for depositing functional thin films with tailored optical and electronic properties. Thanks to its adjustable band structure, good chemical stability, and compatibility with RF sputtering systems, ZnIn₂S₄ has become an important material for optoelectronics, energy-related devices, and advanced thin film research.

Detailed Description

ZnIn₂S₄ is a zinc–indium sulfide compound with a well-defined stoichiometry that enables precise control of film composition during sputtering. Compared with binary sulfides such as ZnS or In₂S₃, ZnIn₂S₄ offers greater flexibility in tuning electrical conductivity, optical absorption, and photo-response through controlled deposition conditions.

Our Zinc Indium Sulfide sputtering targets are produced using carefully synthesized powders followed by high-density consolidation processes such as hot pressing or pressure-assisted sintering. This results in a dense and uniform microstructure, which is critical for stable sputtering rates, minimal particle generation, and consistent film quality.

The targets can be supplied as unbonded discs or bonded to metallic backing plates (such as copper or titanium) to improve thermal conductivity and mechanical stability during sputtering. Dimensions, thickness, purity level, and bonding configurations can all be customized to meet specific equipment and application requirements.

Applications

Zinc Indium Sulfide (ZnIn₂S₄) sputtering targets are commonly used in:

  • Optoelectronic thin films, including photodetectors and photosensitive layers

  • Photovoltaic and energy devices, such as buffer or functional semiconductor layers

  • Display and transparent electronics, where controlled optical absorption is required

  • Photocatalytic and functional coatings for environmental and research applications

  • R&D thin film deposition, including bandgap engineering and material exploration

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaZnIn₂S₄Defines stoichiometry and film properties
Purity99.9% – 99.99%Reduces impurity-induced defects
Diameter25 – 300 mm (custom)Fits various sputtering cathodes
Thickness3 – 6 mm (custom)Influences sputtering rate and target life
Density≥ 95% theoreticalEnsures stable sputtering performance
BondingUnbonded / Cu or Ti backingImproves heat dissipation and stability
Sputtering MethodRF Magnetron SputteringSuitable for compound sulfide materials

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Zinc Indium Sulfide (ZnIn₂S₄)Tunable bandgap and good stabilityOptoelectronics, energy films
Zinc Sulfide (ZnS)Wide bandgap, high transparencyOptical coatings
Indium Sulfide (In₂S₃)Favorable semiconductor propertiesSolar cells, detectors

FAQ

QuestionAnswer
Can ZnIn₂S₄ targets be customized?Yes, diameter, thickness, purity, and bonding options can be tailored.
Which sputtering technique is recommended?RF sputtering is most commonly used for ZnIn₂S₄.
Are the targets suitable for research use?Yes, they are widely used in laboratory and pilot-scale R&D.
How are the targets packaged?Vacuum-sealed with protective foam and export-grade cartons or crates.
Can stoichiometry be tightly controlled?Yes, strict compositional control is applied during powder synthesis and target fabrication.

Packaging

Our Zinc Indium Sulfide (ZnIn₂S₄) Sputtering Targets are carefully labeled and vacuum-packaged to ensure clear identification and reliable quality control. Protective materials are used to prevent contamination, oxidation, or mechanical damage during storage and transportation, ensuring the targets arrive ready for immediate use.

Conclusion

The Zinc Indium Sulfide Sputtering Target (ZnIn₂S₄) provides a stable, customizable, and high-performance solution for depositing ternary sulfide thin films. Its balanced optical and electronic properties make it well suited for optoelectronic, energy, and advanced research applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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ZnIn2S4 TRG 4N Ø2″×3mm Bonded to 2mm Cu BP Ø6mm Total

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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