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ST0204 Zinc Oxide with Alumina Sputtering Target, ZnO/Al2O3

Chemical Formula: ZnO/Al2O3
Catalog Number: ST0204
CAS Number: 1314-13-2 | 1344
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Zinc Oxide with Alumina  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Zinc Oxide with Alumina Sputtering Target Description

Zinc Oxide with Alumina (ZnO/Al2O3) sputtering target from TFM is a composite oxide sputtering material. This target combines zinc oxide, known for its semiconducting and piezoelectric properties, with alumina, a material known for its high thermal stability and insulating characteristics. This combination is widely used in applications requiring the unique properties of both materials.

ZincZinc is a chemical element with the symbol “Zn,” which originates from the German word ‘zinc,’ possibly derived from the Persian ‘sing,’ meaning stone. It has been utilized since before 1000 BC and was discovered by Indian metallurgists. Zinc holds the atomic number 30 in the periodic table and is positioned in Period 4, Group 12, within the d-block. The relative atomic mass of zinc is 65.409(4) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: Zinc Sputtering Target

AluminumAluminum, also known as aluminium, is a chemical element with the symbol “Al.” The name originates from the Latin word ‘alumen,’ meaning bitter salt. It was first identified in 1825 by H.C. Ørsted, who also successfully isolated it. Aluminum is located in Period 3 and Group 13 of the periodic table, within the p-block. It has an atomic number of 13, and its relative atomic mass is 26.9815386(8) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: Aluminum Sputtering Target

OxygenOxygen is a chemical element with the symbol “O,” derived from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first identified and observed by the chemist W. Scheele in 1771, who also successfully isolated it. Oxygen is positioned in Period 2 and Group 16 of the periodic table, within the p-block. It has an atomic number of 8 and a relative atomic mass of 15.9994(3) Dalton, with the number in brackets indicating the uncertainty in measurement.

Zinc Oxide with Alumina Sputtering Target Bonding

Specialized bonding services for Zinc Oxide with Alumina (ZnO/Al2O3) Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Zinc Oxide with Alumina Sputtering Target Packaging

Our Zinc Oxide with Alumina Sputter Targets are meticulously handled to prevent any damage during storage and transportation. This careful attention ensures the preservation of product quality, maintaining the targets in their original, pristine condition.

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TFM offers Zinc Oxide with Alumina Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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