Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
Zinc Oxide with Gallium Oxide Sputtering Target

ST0205 Zinc Oxide with Gallium Oxide Sputtering Target, ZnO/Ga2O3

Chemical Formula: ZnO/Ga2O3
Catalog Number: ST0205
CAS Number: 1314-13-2 | 1202
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

 Zinc Oxide with Gallium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Zinc Oxide with Gallium Oxide Sputtering Target Description

Zinc Oxide doped with Gallium Oxide sputtering target, provided by TFM, is a high-purity oxide material with the chemical formula ZnO/Ga2O3. This combination leverages the properties of zinc oxide, known for its wide bandgap and high electron mobility, with the conductivity-enhancing characteristics of gallium oxide, making it ideal for various electronic and optoelectronic applications.

ZincZinc is a chemical element with the symbol “Zn,” originating from the German word ‘zinc,’ which may derive from the Persian ‘sing,’ meaning stone. It has been utilized since before 1000 BC, with its discovery attributed to Indian metallurgists. Zinc is element number 30 on the periodic table, located in Period 4 and Group 12, and is part of the d-block. The relative atomic mass of zinc is 65.409(4) Dalton, with the value in brackets indicating the measurement uncertainty.

Related Product: Zinc Sputtering Target

GalliumGallium is a chemical element that originated from France (with the Latin name Gallia). It was first mentioned in 1875 and observed by P. E. L. de Boisbaudran. The isolation was later accomplished and announced by P. E. L. de Boisbaudran. “Ga” is the canonical chemical symbol of gallium. Its atomic number in the periodic table of elements is 31 with a location at Period 4 and Group 13, belonging to the p-block. The relative atomic mass of gallium is 69.723(1) Dalton, the number in the brackets indicating the uncertainty.

 

OxygenOxygen, a chemical element with the symbol “O,” originates from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first identified in 1771 by W. Scheele, who also isolated it. Oxygen has the atomic number 8 and is located in Period 2, Group 16 of the periodic table, within the p-block. The relative atomic mass of oxygen is 15.9994(3) Dalton, with the number in brackets indicating the measurement uncertainty.

Zinc Oxide with Gallium Oxide Sputtering Target Packaging

Our Zinc Oxide with Gallium Oxide Sputter Targets are meticulously handled and packaged to ensure they remain in pristine condition during storage and transportation. This careful handling helps maintain the high quality and integrity of the product, preventing any potential damage and preserving its original properties.

Get Contact

TFM offers Zinc Oxide with Gallium Oxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

Reviews

There are no reviews yet.

Be the first to review “ST0205 Zinc Oxide with Gallium Oxide Sputtering Target, ZnO/Ga2O3”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top