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ST0232 Zirconium Carbide Sputtering Target, ZrC

Chemical Formula: ZrC
Catalog Number: ST0232
CAS Number: 12070-14-3
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Zirconium Carbide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Zirconium Carbide Sputtering Target Description

Zirconium carbide sputtering target from TFM is a high-quality carbide ceramic sputtering material with the chemical formula ZrC. Known for its high melting point, hardness, and good electrical conductivity, zirconium carbide is used in various advanced material applications, including thin film deposition processes for semiconductor and coating industries.

ZirconiumZirconium is a chemical element with the symbol “Zr,” derived from the Persian word ‘zargun,’ meaning gold-colored. It was first identified in 1789 by H. Klaproth, and its isolation was later achieved by J. Berzelius. Zirconium is located in Period 5, Group 4 of the periodic table, and belongs to the d-block elements. Its atomic number is 40, and the relative atomic mass is 91.224(2) Dalton, with the number in brackets indicating the uncertainty in the measurement. Zirconium is commonly used in various industrial applications due to its corrosion resistance and strong structural properties.

Related Product: Zirconium Sputtering Target

Carbon, represented by the chemical symbol “C,” is an element named from the Latin word ‘carbo,’ meaning charcoal. It has been utilized since 3750 BC, with early uses attributed to the Egyptians and Sumerians. Carbon is a key element in the periodic table, positioned in Period 2 and Group 14, within the p-block. It has an atomic number of 6 and a relative atomic mass of 12.0107(8) Dalton, with the figure in brackets indicating the uncertainty in this measurement. Carbon is fundamental to life and is found in various forms, including graphite, diamond, and as a component of organic molecules.

Zirconium Carbide Sputtering Target Handling Notes

1. Indium bonding is recommended for zirconium carbide sputtering targets because of certain properties that make them less ideal for direct sputtering. Specifically, zirconium carbide exhibits brittleness and low thermal conductivity, which can complicate the sputtering process.

2. Due to its low thermal conductivity, zirconium carbide is susceptible to thermal shock. This characteristic makes careful handling and proper bonding techniques essential to ensure the stability and effectiveness of the sputtering target during use.

Zirconium Carbide Sputtering Target Packaging

Our zirconium carbide sputtering targets are meticulously tagged and labeled externally to ensure accurate identification and strict quality control. We take extensive measures to prevent any potential damage during storage and transportation, thereby preserving the integrity and performance of our products.

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TFM offers Zirconium Carbide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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