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Aluminum Copper Sputtering Target

ST0062 Aluminum Copper Sputtering Target, Al/Cu

Chemical Formula: Al/Cu
Catalog Number: ST0062
CAS Number: 12004-15-8
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Copper sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Aluminum Copper Sputtering Targets are widely used in thin-film deposition processes where precise control of electrical conductivity, adhesion, and corrosion resistance is required. By combining aluminum’s lightweight, high conductivity characteristics with copper’s excellent electrical and thermal performance, this alloy target plays a critical role in advanced coating technologies. It is particularly valued in semiconductor manufacturing, microelectronics, and functional thin films, where film stability and reproducibility are essential.

Ordering Table

Item Code Material Size Purity Price (USD) Get A Quote
ST0062-01 Aluminum Copper 1.00" Dia. × 0.125" Thick 99.999% $109.65 Add to Cart
ST0062-02 Aluminum Copper 1.00" Dia. × 0.250" Thick 99.999% $119.00
ST0062-03 Aluminum Copper 2.00" Dia. × 0.125" Thick 99.999% $125.80
ST0062-04 Aluminum Copper 2.00" Dia. × 0.250" Thick 99.999% $169.15
ST0062-05 Aluminum Copper 3.00" Dia. × 0.125" Thick 99.999% $232.05
ST0062-06 Aluminum Copper 3.00" Dia. × 0.250" Thick 99.999% $312.80
ST0062-07 Aluminum Copper 4.00" Dia. × 0.125" Thick 99.999% $250.75
ST0062-08 Aluminum Copper 4.00" Dia. × 0.250" Thick 99.999% $357.00
ST0062-09 Aluminum Copper 6.00" Dia. × 0.125" Thick 99.999% P.O.R.
ST0062-10 Aluminum Copper 6.00" Dia. × 0.250" Thick 99.999% P.O.R.

Detailed Description

An Aluminum Copper Sputtering Target is an engineered alloy target designed for Physical Vapor Deposition (PVD) processes such as DC and RF sputtering. The aluminum–copper composition is carefully controlled to ensure uniform elemental distribution throughout the target, which directly influences film composition consistency during deposition.

The presence of copper in aluminum significantly improves electromigration resistance and mechanical strength compared with pure aluminum targets. This makes Aluminum Copper targets especially suitable for applications involving high current densities or long-term device reliability. From a manufacturing standpoint, these targets are produced using high-purity raw materials, followed by advanced melting, casting, and thermo-mechanical processing to achieve high density and low porosity.

Targets can be supplied in monolithic form or bonded to backing plates such as copper or titanium. Proper bonding enhances heat dissipation during sputtering, reduces target cracking risk, and improves overall target lifetime. Dimensions, alloy ratios, and bonding configurations can be customized to match specific sputtering systems and process conditions.

Applications

Aluminum Copper Sputtering Targets are used across a wide range of industries, including:

  • Semiconductor interconnect layers and metallization

  • Integrated circuits and microelectronic devices

  • Display panels and flat-panel display coatings

  • Thin-film resistors and conductive layers

  • Barrier and seed layers in advanced packaging

  • Research and development of functional alloy films

These targets are especially common in applications where aluminum films require enhanced electrical performance and long-term stability.

Technical Parameters

ParameterTypical Value / RangeImportance
Alloy CompositionAl–Cu (custom ratios available)Determines film conductivity and reliability
Purity99.9% – 99.99%Reduces impurities and film defects
Density≥ 99% theoreticalEnsures stable sputtering and uniform erosion
Diameter25 – 300 mm (custom)Compatible with various sputtering systems
Thickness3 – 10 mm (custom)Affects target lifetime and sputtering rate
BondingIndium / Elastomer / Direct BondImproves thermal management and stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Aluminum Copper Sputtering TargetImproved electromigration resistanceSemiconductor interconnects
Pure Aluminum TargetHigh conductivity, low costGeneral metallization
Pure Copper TargetExcellent electrical performanceThick conductive films
Aluminum Silicon TargetEnhanced adhesionDisplay and IC layers

FAQ

QuestionAnswer
Can the alloy composition be customized?Yes, aluminum-to-copper ratios can be tailored to process requirements.
Is bonding to a backing plate available?Yes, copper or titanium backing plates are commonly offered.
Which sputtering methods are compatible?Suitable for DC and RF sputtering systems.
How is target quality ensured?Each target undergoes strict dimensional, density, and composition inspection.

Packaging

Our Aluminum Copper Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and strict quality control. Each target is carefully packaged with protective cushioning and vacuum-sealed or moisture-resistant materials to prevent contamination or damage during storage and transportation. This approach ensures the targets arrive in optimal condition, ready for immediate use.

Aluminum Copper Sputtering Target Bonding Services

Specialized bonding services for Aluminum Copper Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

 

Conclusion

Aluminum Copper Sputtering Targets offer a balanced combination of conductivity, durability, and process stability, making them a reliable choice for demanding thin-film applications. With customizable compositions, dimensions, and bonding options, they can be precisely matched to your deposition requirements.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Related Product: Aluminum Sputtering Target, Copper Sputtering Target

 

Order Now

Al/Cu 99/1 wt%, 1.00" Dia. × 0.125" Thick ST0062-01, Al/Cu 99/1 wt%, 1.00" Dia. × 0.250" Thick ST0062-02, Al/Cu 99/1 wt%, 2.00" Dia. × 0.125" Thick ST0062-03, Al/Cu 99/1 wt%, 2.00" Dia. × 0.250" Thick ST0062-04, Al/Cu 99/1 wt%, 3.00" Dia. × 0.125" Thick ST0062-05, Al/Cu 99/1 wt%, 3.00" Dia. × 0.250" Thick ST0062-06, Al/Cu 99/1 wt%, 4.00" Dia. × 0.125" Thick ST0062-07, Al/Cu 99/1 wt%, 4.00" Dia. × 0.250" Thick ST0062-08, Al/Cu 99/1 wt%, 6.00" Dia. × 0.125" Thick ST0062-09, Al/Cu 99/1 wt%, 6.00" Dia. × 0.250" Thick ST0062-10

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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