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ST0233 Aluminum Fluoride Sputtering Target, AlF3

Chemical Formula: AlF3
Catalog Number: ST0233
CAS Number: 7784-18-1
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Fluoride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Aluminum Fluoride Sputtering Target Description

The aluminum fluoride sputtering target from TFM is a ceramic material with the chemical formula AlF₃. This fluoride is commonly used in various thin-film deposition processes, particularly in applications requiring high thermal stability and low refractive index coatings. AlF₃ is also known for its ability to resist moisture and other environmental factors, making it suitable for use in optical coatings, electronics, and other advanced materials applications.

AluminiumAluminum, sometimes spelled aluminium, is a chemical element derived from the Latin name for alum, ‘alumen,’ which means bitter salt. It was first identified and observed by H.C. Ørsted in 1825, who also achieved its isolation. The element is represented by the symbol “Al” and is located in Period 3 and Group 13 of the periodic table, within the p-block. Aluminum has an atomic number of 13 and a relative atomic mass of 26.9815386(8) Dalton, with the number in brackets indicating the uncertainty in its measurement.

Related Product: Aluminum Sputtering Target

FluorineFluorine, a chemical element, gets its name from the Latin word ‘fluere,’ which means “to flow.” It was first mentioned in 1810 by A.-M. Ampère, with its isolation being achieved and later announced by H. Moissan. The element’s symbol is “F,” and it is positioned in Period 2 and Group 17 of the periodic table, within the p-block. Fluorine has an atomic number of 9 and a relative atomic mass of 18.9984032(5) Dalton, with the figure in brackets representing the measurement uncertainty.

Aluminum Fluoride Sputtering Target Specification

Compound FormulaAlF3
Molecular Weight83.98
AppearanceSolid
Melting Point1,291° C
Boiling PointN/A
Density2.88 g/cm3

Aluminum Fluoride Sputtering Target Packaging

Our Aluminum Fluoride Sputtering Target is meticulously tagged and labeled externally for easy identification and strict quality control. We take special care during handling and packaging to prevent any damage during storage or transportation, ensuring that the product arrives in perfect condition.

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TFM offers Aluminum Fluoride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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