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Aluminum Nitride Sputtering Target

ST0208 Aluminum Nitride Sputtering Target, AlN

Chemical Formula: AlN
Catalog Number: ST0208
CAS Number: 24304-00-5
Purity: 99.5%, 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Nitride  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Aluminum Nitride Sputtering Targets (AlN) are widely used ceramic targets for depositing high-performance nitride thin films in semiconductor, electronic, and thermal-management applications. With a unique combination of high thermal conductivity, excellent electrical insulation, and strong chemical stability, AlN has become a critical material for advanced device fabrication where heat dissipation, dielectric reliability, and film purity are essential.

Detailed Description

AlN sputtering targets are manufactured from high-purity aluminum nitride powders through carefully controlled ceramic processing, including powder synthesis, pressing, and high-temperature sintering. This process yields targets with high density, uniform microstructure, and excellent phase purity—key factors for stable plasma behavior and reproducible film properties.

Unlike metallic aluminum targets used in reactive sputtering, AlN compound targets allow direct deposition of aluminum nitride films without relying heavily on nitrogen flow control. This simplifies process windows, improves repeatability, and reduces the risk of target poisoning or compositional drift. Due to the insulating nature of AlN, RF sputtering is typically preferred, although pulsed DC sputtering may also be used in certain system configurations.

AlN thin films deposited from sputtering targets exhibit high resistivity, strong adhesion to common substrates, low dielectric loss, and excellent thermal conductivity, making them suitable for both microelectronics and power device applications.

Applications

Aluminum Nitride sputtering targets are commonly used in:

  • Semiconductor devices: Dielectric and passivation layers

  • Power electronics: Insulating films with high thermal conductivity

  • MEMS & sensors: Piezoelectric and functional nitride layers

  • RF & microwave devices: Low-loss dielectric films

  • Optoelectronics: Buffer and insulating layers

  • Research & development: Nitride thin-film materials studies

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical CompositionAlN (Aluminum Nitride)Defines thermal & dielectric properties
Purity99.9% – 99.99%Reduces defects and contamination
Diameter25 – 300 mm (custom)Fits standard sputtering cathodes
Thickness3 – 6 mm (typical)Influences target lifetime
Density≥ 95% of theoreticalEnsures stable sputtering
Sputtering ModeRF (preferred) / Pulsed DCSuitable for insulating ceramics
BondingIndium / Elastomer / DirectImproves thermal and mechanical stability

Comparison with Related Nitride Targets

MaterialKey AdvantageTypical Application
AlNHigh thermal conductivity, electrical insulationPower & RF devices
Si₃N₄Strong mechanical strengthPassivation layers
TiNHigh conductivity, hardnessElectrodes & hard coatings
GaNWide bandgap semiconductorLEDs & power electronics

FAQ

QuestionAnswer
Can AlN sputtering targets be customized?Yes, size, purity, density, and bonding options are available.
Why is RF sputtering recommended?AlN is electrically insulating, making RF sputtering more stable.
Can AlN replace reactive sputtering from aluminum?In many cases, yes—compound targets simplify process control.
How are AlN targets packaged?Vacuum-sealed with moisture-resistant protective packaging.

Packaging

Our Aluminum Nitride Sputtering Targets (AlN) are meticulously tagged and labeled to ensure accurate identification and strict quality control. Each target is vacuum-sealed and protected with reinforced cushioning to prevent moisture uptake, contamination, or mechanical damage during storage and transportation.

Conclusion

Aluminum Nitride Sputtering Targets (AlN) provide a reliable and efficient solution for depositing high-quality nitride thin films with excellent thermal and dielectric performance. With stable sputtering behavior, precise compositional control, and flexible customization options, AlN targets are well suited for semiconductor manufacturing, power electronics, and advanced research applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Product

AlN Target ø50.8*6.35mm Bonded to Cu B/Plate (ø50.8*2.54mm), AlN target ø4"×6mm 3N, AlN 99.8%, 1.00" Dia. × 0.125" Thick ST0208-01, AlN 99.8%, 1.00" Dia. × 0.250" Thick ST0208-02, AlN 99.8%, 2.00" Dia. × 0.125" Thick ST0208-03, AlN 99.8%, 2.00" Dia. × 0.250" Thick ST0208-04, AlN 99.8%, 3.00" Dia. × 0.125" Thick ST0208-05, AlN 99.8%, 3.00" Dia. × 0.250" Thick ST0208-06, AlN 99.8%, 4.00" Dia. × 0.125" Thick ST0208-07, AlN 99.8%, 4.00" Dia. × 0.250" Thick ST0208-08, AlN 99.8%, 6.00" Dia. × 0.250" Thick ST0208-09, AlN TRG 3N, Ø4 × 3.175 mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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