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ST0065 Aluminum Scandium Sputtering Target, Al/Sc

Chemical Formula: Al/Sc
Catalog Number: ST0065
CAS Number: 7429-90-5 | 7440
Purity: 99%, 99.5%, 99.9%, 99.95%, 99.99%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Scandium sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

 

MSDS File

Aluminum Scandium Sputtering Target Description

The aluminum scandium sputtering target from TFM is an alloy sputtering material composed of aluminum (Al) and scandium (Sc).

Aluminum

Aluminum:

Aluminum, also known as aluminium, is a chemical element that gets its name from the Latin word for alum, ‘alumen,’ meaning bitter salt. It was first mentioned and observed by H.C. Ørsted in 1825, who later successfully isolated it. The chemical symbol for aluminum is “Al,” and it holds the atomic number 13. It is located in Period 3, Group 13 of the periodic table, belonging to the p-block. The relative atomic mass of aluminum is 26.9815386(8) Dalton, with the number in brackets indicating the uncertainty.

Related Product: Aluminum (Al) Sputtering Target

Scandium

Scandium:

Scandium is a chemical element named after Scandinavia (Latin name Scandia). It was first mentioned and observed in 1879 by F. Nilson, who also successfully isolated it. The chemical symbol for scandium is “Sc,” and it has the atomic number 21. Scandium is located in Period 4, Group 3 of the periodic table, belonging to the d-block. The relative atomic mass of scandium is 44.955912(6) Dalton, with the number in brackets indicating the uncertainty.

Related Product: Scandium (Sc) Sputtering Target

Aluminum Scandium Sputtering Target Specification

Material Type Aluminum Scandium
Symbol Al/Sc
Color/Appearance Gray solid, no order
Density 2.7 g/cm3
Technics Hot Isostatic Pressing, Powder metallurgy
Type of Bond Not Recommended
Applications Semiconductor, CVD, PVD

Aluminum Scandium Sputtering Target Packing

Our aluminum scandium sputter targets are meticulously tagged and labeled on the outside to ensure easy identification and maintain strict quality control. We take extensive precautions to prevent any potential damage during storage or transportation, ensuring that each target arrives in excellent condition.

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TFM offers Aluminum Scandium Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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