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ST0934 Antimony Triselenide Sputtering Target, Sb2Se3

Chemical FormulaSb2Se3
Catalog No.ST0934
CAS Number1315-05-5
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Antimony Triselenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Antimony Triselenide Sputtering Target Description

The Antimony Triselenide Sputtering Target, produced by TFM, is designed with optimal density and a minimal average grain size, making it ideal for use in optoelectronic and thermoelectric technologies. The sputtering process enables the precise deposition of ultra-high purity thin films of metal or oxide materials onto solid substrates. Our targets offer exceptional purity, ensuring the superior quality and performance of the resulting films.

Antimony triselenide, a binary single-phase compound, is particularly well-suited for creating low-cost, low-toxicity solar cells, thanks to its suitable energy bandgap, large absorption coefficient, and low crystal growth temperature. Additionally, its high Seebeck coefficient makes antimony triselenide a promising material for thermoelectric applications, further highlighting its versatility and value in advanced technologies.

Related Product: Antimony Sulfide Sputtering TargetAntimony Telluride Sputtering Target

Antimony Triselenide Sputtering Target Specifications

Compound FormulaSb2Se3
Molecular Weight480.40
Appearancegray target
Melting Point611℃
Density5.81 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Antimony Triselenide Sputtering Target Handling Notes

Indium bonding is recommended for the Antimony Triselenide Sputtering Target because of the material’s brittleness and low thermal conductivity, which make it challenging to sputter. These characteristics also make the material prone to thermal shock. Indium bonding helps address these issues, providing enhanced stability and performance during the sputtering process.

Antimony Triselenide Sputtering Target Application

Antimony Triselenide Sputtering Targets are widely used in Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and various optical processes. Beyond these applications, antimony selenide is also recognized for its potential as a thermoelectric material, thanks to its high Seebeck coefficient. However, its overall efficiency is somewhat limited by its low electrical conductivity, which affects its figure of merit in thermoelectric applications.

Antimony Triselenide Sputtering Target Packaging

Our Antimony Triselenide Sputtering Target is meticulously handled during storage and transportation to ensure it remains in pristine condition. We take every precaution to preserve the quality of our products, so they arrive ready for optimal performance in your applications.

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TFM offers Antimony Triselenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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