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ST0490 Bismuth Antimony Selenide Sputtering Target, Bi/Sb/Se

Chemical Formula: Bi/Sb/Se
Catalog Number: ST0490
Purity: 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Bismuth Antimony Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Bismuth Antimony Selenide Sputtering Target Description

Bismuth

Bismuth is a chemical element named after the German *Bisemutum*, a corruption of *Weisse Masse*, meaning “white mass.” It was first used in 1753 and discovered by C.F. Geoffroy. The chemical symbol for bismuth is “Bi.” It is located in Period 6, Group 15 of the periodic table, within the p-block. Its atomic number is 83, and its relative atomic mass is 208.98040, with the number in brackets indicating the uncertainty.

 

Antimony

Antimony is a lustrous gray metalloid primarily found as the sulfide mineral stibnite (Sb₂S₃). Antimony compounds have been known since ancient times and were used in medicine and cosmetics, often referred to by the Arabic name *kohl*. Metallic antimony was also recognized early on but was mistakenly identified as lead. The earliest known description of the metal in the West was by Vannoccio Biringuccio in 1540. Industrial refining methods for antimony include roasting and reduction with carbon, or direct reduction of stibnite with iron.

SeleniumSelenium is a chemical element named after the Greek word *selene*, meaning “moon.” It was first mentioned in 1817 by J. Berzelius and G. Gahn, who also accomplished its isolation. The chemical symbol for selenium is “Se.” It is located in Period 4, Group 16 of the periodic table, within the p-block. Its atomic number is 34, and its relative atomic mass is 78.96, with the number in brackets indicating the uncertainty.

Related Products: Bismuth Sputtering Target, Antimony Sputtering Target

Bismuth Antimony Selenide Sputtering Target Specifications

Material TypeBismuth Antimony Selenide
SymbolBi/Sb/Se
Color/AppearanceSolid
Melting Point/
Density/
Available SizesDia.: 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Packing

Our Bismuth Antimony Selenide Sputtering Targets are clearly tagged and labeled for efficient identification and quality control. We take great care to prevent any damage during storage and transportation, ensuring the targets remain in excellent condition.

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TFM offers Bismuth Antimony Selenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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