Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
cesium-fluoride-csf-sputtering-target-removebg-preview-1

ST0238 Cesium Fluoride Sputtering Target, CsF

Chemical Formula: CsF
Catalog Number: ST0238
CAS Number: 13400-13-0
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Cesium Fluoride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Cesium Fluoride Sputtering Target Description

A Cesium fluoride sputtering target is a ceramic sputtering target composed of the elements cesium and fluorine, with the chemical formula CsF. This material is typically used in thin film deposition processes in various applications, including optical coatings, electronics, and other advanced material technologies.

CesiumCesium (Cs) is a chemical element with atomic number 55, known for its soft, silvery-golden appearance. This alkali metal is unique due to its low melting point of 28.5 °C (83.3 °F), making it one of the few metals that can be liquid at or near room temperature. Cesium shares similar physical and chemical properties with rubidium and potassium, characterized by high reactivity, including being pyrophoric and reacting with water even at temperatures as low as −116 °C (−177 °F). It is the least electronegative element, with a Pauling scale value of 0.79, and has only one stable isotope, cesium-133. The element is primarily obtained from the mineral pollucite, while its radioactive isotopes, particularly cesium-137, are by-products of nuclear reactor waste.

Fluorine

Fluorine, also known as fluorine, is a chemical element with the symbol “F” and atomic number 9. The name originates from the Latin word ‘fluere,’ meaning “to flow.” This element was first mentioned in 1810 and observed by André-Marie Ampère. The isolation of fluorine was successfully achieved and announced by Henri Moissan. Fluorine is located in Period 2 and Group 17 of the periodic table, placing it in the p-block. Its relative atomic mass is 18.9984032(5) Dalton, with the number in parentheses indicating the uncertainty in this value.

Cesium Fluoride Sputtering Target Application

The cesium fluoride sputtering target is widely used for various applications, including thin film deposition, decoration, semiconductor, display, LED, and photovoltaic devices. It is also utilized in functional coatings, the optical information storage industry, glass coating for car glass and architectural glass, and optical communication, among other uses.

Cesium Fluoride Sputtering Target Packing

Our cesium fluoride sputter targets are meticulously tagged and labeled externally for easy identification and strict quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the products maintain their quality and arrive in perfect condition.

Get Contact

TFM offers Cesium Fluoride  Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

Reviews

There are no reviews yet.

Be the first to review “ST0238 Cesium Fluoride Sputtering Target, CsF”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top