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ST0276 Chromium Sulfide Sputtering Target, Cr2S3

Chemical Formula:Ā Cr2S3
Catalog Number:Ā ST0276
CAS Number:Ā 12018-22-3
Purity:Ā 99.9%
Shape:Ā Discs, Plates, Column Targets, Step Targets, Custom-made

Chromium SulfideĀ  sputtering targetĀ  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Chromium Sulfide Sputtering Target Description

A chromium sulfide sputtering target is a type of sulfide ceramic material composed of chromium and sulfur. This target is used in various thin film deposition processes, providing unique properties such as corrosion resistance and electrical conductivity. It is commonly utilized in applications like semiconductor manufacturing, display technologies, and photovoltaic devices. The material’s specific properties can be tailored to meet the requirements of different industries and applications.

ChromiumChromium is a chemical element whose name originates from the Greek word ā€˜chroma,’ meaning color, reflecting its colorful compounds. It was used as early as before 1 AD and was discovered by the Terracotta Army in ancient China. The canonical chemical symbol for chromium is ā€œCr,ā€ and it holds the atomic number 24 in the periodic table. Chromium is positioned in Period 4 and Group 6, within the d-block, indicating it is a transition metal. The relative atomic mass of chromium is approximately 51.9961(6) Daltons, with the number in parentheses indicating the measurement uncertainty.

Related Product:Ā Chromium Sputtering Target

SulfurSulfur, also known as sulphur, is a chemical element whose name may derive from the Sanskrit word ā€˜sulvere’ or the Latin ā€˜sulfurium,’ both referring to sulfur. This element has been known and used since before 2000 BC, with its discovery attributed to ancient Chinese and Indian civilizations. The chemical symbol for sulfur is ā€œS,ā€ and it is found in the periodic table with an atomic number of 16. It is located in Period 3 and Group 16, placing it in the p-block. The relative atomic mass of sulfur is approximately 32.065(5) Daltons, with the number in parentheses indicating the uncertainty in this measurement.

Chromium Sulfide Sputtering Target Specification

Compound FormulaCr2S3
AppearanceBrown to black target
Density3.77g/cm3
Melting Point1,350° C
Molecular Weight200.19
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Chromium Sulfide Sputtering Target Application

The chromium sulfide sputtering target is widely used in various applications, including thin film deposition, decoration, and in the manufacturing of semiconductor devices. It is also utilized in the production of displays, LED, and photovoltaic devices. This material is valued for its properties in functional coatings and is employed in industries related to optical information storage, glass coatings (such as those used in car and architectural glass), and optical communication technologies.

Chromium Sulfide Sputtering TargetĀ Packing

Our chromium sulfide sputtering targets are carefully tagged and labeled externally for easy identification and quality control. We take meticulous care in packaging and handling to prevent any potential damage during storage and transportation, ensuring that the products maintain their integrity and reach you in optimal condition.

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TFM offers Chromium Sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Alā‚‚Oā‚ƒ, SiOā‚‚, TiOā‚‚), alloys, or composites—chosen based on the film’s desired properties.

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They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

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In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

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Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

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Operators monitor target erosion (often by measuring the depth of the eroded ā€œrace trackā€) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

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Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

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DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

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In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also ā€œpoisonā€ the target surface if not carefully controlled.

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Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

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Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

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