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Cobalt Manganese Gallium Sputtering Target, Co₂MnGa

Cobalt Manganese Gallium Sputtering Target

Introduction

The Cobalt Manganese Gallium Sputtering Target (Co-Mn-Ga) is a specialized alloy target designed for advanced thin film deposition. Known for its unique magnetic and electronic properties, this material is particularly valued in the development of spintronic devices, magneto-optical applications, and next-generation semiconductor research. By precisely controlling the alloy composition, researchers and engineers can tailor thin film characteristics for highly specialized functionalities.

Detailed Description

Cobalt Manganese Gallium belongs to the class of Heusler alloys, which exhibit half-metallic ferromagnetism and tunable electronic structures. When fabricated into sputtering targets, the material maintains high density and uniform microstructure, ensuring stable deposition rates and reproducible thin film quality.

Key features include:

  • Composition Control: Typically produced with atomic ratios such as Co₂MnGa, enabling half-metallic behavior.

  • High Purity: Available in 99.9%–99.99% purity grades to minimize contamination during thin film deposition.

  • Custom Dimensions: Supplied as discs, plates, or rectangular targets ranging from laboratory-scale to large-area coating systems.

  • Optional Bonding: Copper or titanium backing plates are available to enhance thermal conductivity and improve target stability during high-power sputtering.

These properties make the Co-Mn-Ga sputtering target an essential material for both academic research and industrial applications where precise magnetic and electronic performance is required.

Applications

  • Spintronics: Fabrication of magnetic tunnel junctions (MTJs), spin valves, and spin-transfer torque devices.

  • Semiconductors: Thin films for magneto-electronic integration with CMOS technology.

  • Optics: Development of magneto-optical coatings and sensors.

  • R&D: Fundamental studies on Heusler alloys, half-metallicity, and band structure engineering.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Higher purity ensures reduced impurities in magnetic films
CompositionCo₂MnGa (customizable)Maintains half-metallic ferromagnetic properties
Diameter25 – 300 mm (custom)Compatible with laboratory and industrial sputtering systems
Thickness3 – 6 mmAffects sputtering rate and deposition uniformity
BondingCopper / Titanium backingEnhances cooling and prevents cracking under load

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Cobalt Manganese Gallium (CoMnGa)Half-metallic, tunable magnetismSpintronics, MTJs
Cobalt Iron Aluminum (Co₂FeAl)Stronger magnetic momentsMagnetic recording
Nickel Manganese Gallium (NiMnGa)Shape-memory and magnetostrictionActuators, sensors

FAQ

QuestionAnswer
Can the target composition be customized?Yes, atomic ratios of Co, Mn, and Ga can be adjusted to meet specific research requirements.
How is it packaged?Targets are vacuum-sealed with protective foam and shipped in export-safe cartons or wooden crates.
What deposition methods are supported?Primarily DC/RF magnetron sputtering; can also be used in PVD systems.
Which industries use it most?Semiconductor, spintronics research, magnetic storage, and optics.
Is bonding necessary?Not always, but recommended for large targets or high-power sputtering to prevent cracking.

Packaging

Each Cobalt Manganese Gallium Sputtering Target is carefully vacuum-sealed, labeled, and cushioned with protective foam. Export-safe cartons or wooden crates are used to ensure safe delivery and long-term storage stability.

Conclusion

The Cobalt Manganese Gallium Sputtering Target is a critical material for cutting-edge magnetic and electronic thin film applications. With its unique half-metallic properties, high purity, and customizable dimensions, it supports both experimental research and commercial production needs.

For detailed specifications and a quotation, please contact us at [sales@thinfilmmaterials.com].

Order Now

Co₂MnGa target 3N Co2% Mn1% Ga1% ø25.4×3.18mm, Co₂MnGa target 3N Co2% Mn1% Ga1% ø25.4×6.35mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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