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ST0423 Copper Gallium Selenide Sputtering Target, Cu/Ga/Se

Chemical Formula: CuGaSe2
Catalog Number: ST0423
CAS Number: 12018-83-6
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Copper Gallium Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Copper Gallium Selenide Sputtering Target Description

The copper gallium selenide sputtering target is a type of alloy sputtering target composed of copper, gallium, and selenium.

CopperCopper is a chemical element with the symbol “Cu” and atomic number 29. The name “copper” originates from the Old English word “coper,” derived from the Latin term ‘Cyprium aes,’ meaning metal from Cyprus. It has been used since around 9000 BC and was discovered by people from the Middle East. Copper is located in Period 4 and Group 11 of the periodic table, belonging to the d-block elements. Its relative atomic mass is approximately 63.546 Daltons, with the number in parentheses indicating the uncertainty.

Related Product: Copper Sputtering Target

GalliumGallium is a chemical element with the symbol “Ga” and atomic number 31. The name “gallium” originates from the Latin name for France, “Gallia.” It was first mentioned in 1875 and observed by Paul-Émile Lecoq de Boisbaudran, who also accomplished and announced its isolation. Gallium is located in Period 4 and Group 13 of the periodic table, belonging to the p-block elements. Its relative atomic mass is approximately 69.723 Daltons, with the number in parentheses indicating the uncertainty.

Related Product: Gallium Sputtering Target

SeleniumSelenium is a chemical element with the symbol “Se” and atomic number 34. The name “selenium” originates from the Greek word “selene,” meaning moon. It was first mentioned in 1817 and observed by Jöns Jacob Berzelius and Johan Gottlieb Gahn, who also accomplished and announced its isolation. Selenium is located in Period 4 and Group 16 of the periodic table, belonging to the p-block elements. Its relative atomic mass is approximately 78.96 Daltons, with the number in parentheses indicating the uncertainty.

Related Product: Selenium Sputtering Target

Copper Gallium Selenide Sputtering Target Specification

Material TypeCopper Gallium Selenide
SymbolCuGaSe2
Color/AppearanceSteel gray target
Melting PointN/A
Boiling PointN/A
DensityN/A
Type of BondIndium, Elastomer
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Copper Gallium Selenide Sputtering Target Bonding Services

Specialized bonding services for Copper Gallium Selenide Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Packaging

Our copper gallium selenide sputter coater target is carefully packaged in a plastic vacuum bag to prevent damage during storage and transportation, ensuring the product remains in its original condition. Additionally, the Certificate of Analysis (COA) for the raw material is included with the product to verify its quality and specifications.

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TFM offers Copper Gallium Selenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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