Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
fluoride-targets-removebg-preview

ST0241 Erbium Fluoride Sputtering Target, ErF3

Chemical Formula: ErF3
Catalog Number: ST0241
CAS Number: 13760-83-3
Purity: 99.9%, 99.95%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Erbium Fluoride  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Erbium Fluoride Sputtering Target (ErF₃) is a specialized rare-earth compound target used in thin film deposition processes where low optical loss, chemical stability, and precise refractive index control are required. As a fluoride-based sputtering material, ErF₃ plays an important role in advanced optical coatings, photonic devices, and functional thin films, particularly in applications sensitive to oxygen contamination or requiring fluorine-rich compositions.

Detailed Description

Erbium Fluoride (ErF₃) sputtering targets are typically manufactured from high-purity erbium fluoride powder using controlled pressing and sintering techniques to achieve uniform density and stable sputtering behavior. Compared with oxide-based erbium targets, ErF₃ enables the direct deposition of fluoride films without introducing oxygen, which is critical for maintaining optical transparency in the infrared and minimizing absorption losses.

The intrinsic properties of ErF₃—such as its wide bandgap, low phonon energy, and chemical inertness—make it suitable for optical and photonic thin films. During sputtering, ErF₃ targets exhibit relatively stable erosion profiles and reduced target poisoning risks compared to reactive sputtering routes. This contributes to better film composition control and improved process repeatability.

Targets can be supplied in monolithic form or bonded to backing plates (such as copper or titanium) to enhance thermal dissipation and mechanical stability during sputtering. Target dimensions, thickness, and bonding methods are customizable to match various magnetron sputtering systems.

Applications

Erbium Fluoride Sputtering Targets are commonly used in:

  • Optical and infrared (IR) thin film coatings

  • Anti-reflective and protective optical layers

  • Photonic and laser-related components

  • Fluoride-based dielectric films

  • Display and optoelectronic devices

  • Research and development of rare-earth fluoride materials

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaErF₃Defines fluoride-based film composition
Purity99.9% – 99.99%Reduces optical loss and impurities
FormDisc, plate, custom shapesCompatible with various sputtering systems
Diameter25 – 300 mm (custom)Matches magnetron cathode sizes
Thickness3 – 6 mm (typical)Influences sputtering rate and lifetime
Backing PlateCopper / Titanium (optional)Improves heat transfer and stability
Density≥ 95% of theoreticalEnsures uniform sputtering performance

Comparison with Related Erbium Materials

MaterialKey AdvantageTypical Application
Erbium Fluoride (ErF₃)Oxygen-free fluoride filmsOptical & IR coatings
Erbium Oxide (Er₂O₃)High chemical stabilityGeneral dielectric coatings
Metallic ErbiumConductive filmsSpecialty electronic layers

FAQ

QuestionAnswer
Why choose ErF₃ instead of Er₂O₃?ErF₃ enables direct deposition of fluoride films without oxygen incorporation.
Can the target be bonded to a backing plate?Yes, copper or titanium backing plates are available.
Is ErF₃ suitable for RF sputtering?Yes, RF sputtering is commonly used for fluoride compound targets.
Can the target size be customized?Yes, diameter, thickness, and shape can be tailored.
How is the target packaged?Vacuum-sealed with protective cushioning for safe transport.

Packaging

Our Erbium Fluoride Sputtering Targets are carefully cleaned, vacuum-sealed, and securely packaged to prevent moisture uptake and contamination. Each target is clearly labeled to ensure traceability and efficient quality control during storage and transportation.

Conclusion

Erbium Fluoride Sputtering Target (ErF₃) offers a reliable solution for depositing high-quality fluoride thin films with excellent optical performance and compositional control. With high purity, customizable dimensions, and optional backing plates, ErF₃ targets are well suited for advanced optical, photonic, and research-driven sputtering applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Reviews

There are no reviews yet.

Be the first to review “ST0241 Erbium Fluoride Sputtering Target, ErF3”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top