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Gallium (III) Sulphide Sputtering Target

ST0965 Gallium (III) Sulphide Sputtering Target, Ga2S3

Chemical Formula Ga2S3
Catalog No. ST0965
CAS Number 12024-22-5
Purity 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape Discs, Plates, Column Targets, Step Targets, Custom-made

Our Gallium (III) Sulphide Sputtering Target guarantees exceptional purity and uniformity, making it a reliable choice for advanced thin film applications. Renowned for its distinctive optical properties, Gallium Sulphide excels in both optical and electronic fields. Explore our platform for a carefully selected range of high-quality sputtering targets, reflecting our dedication to professionalism and excellence. Rely on us to meet your specialized thin film technology needs, ensuring precision and reliability in every application.

MSDS File

Gallium (III) Sulphide Sputtering Target Description

Gallium (III) Sulphide Sputtering Targets are highly effective in ensuring uniform and controlled thin film deposition, leading to consistent and reliable films on substrates. Known for its exceptional optical properties, Gallium Sulphide is frequently utilized in optical coatings and devices due to its favorable transmission and absorption characteristics. As a semiconductor, it provides the necessary electrical properties for the fabrication of various electronic devices. Additionally, Gallium Sulphide exhibits stability in specific environments, contributing to its long-term reliability across different applications.

 

Related Product: Gallium (III) Selenide Sputtering Target, CIGS Copper Indium Gallium (III) Sulphide Sputtering Target

 

Gallium (III) Sulphide Sputtering Target Specifications

Compound Formula Ga2S3
Molecular Weight 235.64
Appearance Silver Grey Target
Melting Point 1255 °C
Density 3.65 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Gallium (III) Sulphide Sputtering Target Handling Notes

Indium bonding is recommended for Gallium (III) Sulphide Sputtering Targets to address challenges related to the material’s brittleness and low thermal conductivity. Gallium (III) Sulphide has low thermal conductivity and is prone to thermal shock, making indium bonding a practical solution for maintaining stability and performance during the sputtering process.

Gallium (III) Sulphide Sputtering Target Application

Gallium (III) Sulphide Sputtering Targets are integral to various applications due to their specialized properties:

  • Optical Applications: These targets are utilized in creating optical devices thanks to their distinctive optical properties. They are particularly effective in preparing transparent conductive films, optical coatings, and infrared windows.
  • Electronics: As a semiconductor, Gallium Sulphide is essential for fabricating electronic components, including photodiodes and LEDs, benefiting from its electrical properties.
  • Thin Film Technology: They are crucial for the thin film deposition process, ensuring the formation of uniform and reliable films on substrates. This makes them suitable for a broad spectrum of optical, electronic, and magnetic applications.
  • Optical Coatings: Gallium Sulphide thin films are applied in optical coatings to enhance the material’s properties for various reflective, transmissive, and absorptive uses.

Gallium (III) Sulphide Sputtering Target Packaging

We ensure that our Gallium (III) Sulphide Sputtering Target is meticulously managed throughout storage and transportation to maintain the highest quality and integrity of the product.

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TFM offers Gallium (III) Sulphide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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