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ST0971 Germanium Selenide Sputtering Target, GeSe

Chemical FormulaGeSe
Catalog No.ST0971
CAS Number12065-10-0
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Germanium Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Germanium Selenide Sputtering Target Description

Germanium Selenide Sputtering Targets are distinguished by their outstanding thermal stability, ensuring consistent and reliable performance during thin film deposition processes. The unique composition of Germanium Selenide enhances its exceptional electrical conductivity, making it an ideal material for applications requiring efficient charge transport.

These sputtering targets are meticulously engineered with a uniform microstructure, crucial for precision in sputtering performance. The stringent manufacturing processes involved ensure minimal impurities, thereby enhancing the overall quality of the deposited thin films.

Versatile and adaptable, Germanium Selenide Sputtering Targets are designed to meet the evolving demands of advanced technologies. Their compatibility with various sputtering systems allows for seamless integration into both research and manufacturing environments.

In summary, these sputtering targets offer high thermal stability, excellent electrical conductivity, and precise microstructural engineering, establishing them as essential materials for advanced thin film deposition technologies.

Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target

Germanium Selenide Sputtering Target Specifications

Compound FormulaGeSe
Molecular Weight151.60
AppearanceBlack Target
Melting Point667 °C
Density5.6 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Germanium Selenide Sputtering Target Handling Notes

Indium bonding is recommended for Germanium Selenide Sputtering Targets due to certain characteristics that make them less suitable for sputtering on their own. Specifically, the material’s brittleness and low thermal conductivity can pose challenges during the sputtering process. The low thermal conductivity also makes the material susceptible to thermal shock. Indium bonding helps mitigate these issues by providing better thermal management and enhancing the target’s overall performance during sputtering.

Germanium Selenide Sputtering Target Application

Semiconductor Manufacturing: Germanium Selenide Sputtering Targets are essential in semiconductor manufacturing, where their excellent electrical properties make them vital for thin film deposition in semiconductor devices.

Optoelectronic Devices: The unique physical and chemical properties of Germanium Selenide make these targets critical for producing optoelectronic devices, including photovoltaic devices and various other components requiring precise thin film deposition.

Sensor Technology: Widely used in sensor manufacturing, Germanium Selenide Sputtering Targets are ideal for creating high-performance sensors due to their specialized properties.

Scientific Research: The fine control and precision offered by Germanium Selenide Sputtering Targets during thin film deposition make them valuable in scientific research and laboratory settings, where they support materials research and the development of new technologies.

Germanium Selenide Sputtering Target Packaging

Our Germanium Selenide Sputtering Target is meticulously handled during storage and transportation to ensure that the product remains in its original, pristine condition. We take every precaution to protect the integrity of the target, maintaining its quality and performance for your advanced thin film deposition needs.

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TFM’s Germanium Selenide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest average grain sizes, ideal for semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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