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ST0309 Indium (III) Selenide Sputtering Target, In2Se3

Chemical Formula: In2Se3
Catalog Number: ST0309
CAS Number: 12056-07-4
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Indium (III) Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Indium (III) Selenide (In₂Se₃) sputtering targets are key materials for depositing semiconducting thin films used in next-generation optoelectronic and energy devices. As a layered chalcogenide compound, In₂Se₃ exhibits unique electrical, optical, and phase-dependent properties, making it highly attractive for applications such as photovoltaics, photodetectors, and phase-change memory technologies.


Detailed Description

In₂Se₃ sputtering targets are typically manufactured through advanced powder metallurgy and sintering processes to achieve high density and uniform composition. The material exists in multiple crystalline phases (α, β, γ), each offering distinct electrical and structural characteristics, which can influence thin film performance depending on deposition conditions.

High-purity In₂Se₃ targets are essential for ensuring reproducible film quality, particularly in semiconductor and optoelectronic applications where defects and impurities can significantly affect carrier transport and optical absorption. The target microstructure is carefully controlled to minimize porosity and improve sputtering stability, resulting in uniform erosion and consistent deposition rates.

These targets are compatible with RF magnetron sputtering systems due to their semiconducting nature. For enhanced thermal conductivity and mechanical stability during high-power sputtering, bonding to a copper backing plate is often recommended, especially for larger diameters or industrial-scale coating processes.

Key features include:

  • Layered chalcogenide semiconductor with tunable phase properties

  • High absorption coefficient for optoelectronic applications

  • Good carrier transport characteristics for thin film devices

  • High density and uniform composition for stable sputtering

  • Available as planar or bonded targets (Cu backing)


Applications

Indium (III) Selenide sputtering targets are widely used in:

  • Thin film solar cells and photovoltaic devices

  • Photodetectors and infrared sensing devices

  • Phase-change memory and data storage technologies

  • Flexible electronics and wearable devices

  • Semiconductor and optoelectronic research

  • Thin film transistors (TFTs)


Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaIn₂Se₃Defines compound composition
Purity99.9% – 99.999%Critical for electronic performance
Density≥ 95% theoreticalEnsures stable sputtering behavior
Diameter50 – 200 mm (custom available)Matches sputtering systems
Thickness3 – 6 mmInfluences target lifetime
BondingIndium / elastomer / Cu backingImproves thermal conductivity
Sputtering TypeRF magnetronSuitable for semiconductors

Comparison with Related Materials

MaterialKey AdvantageTypical Application
In₂Se₃Tunable phase & optoelectronic propertiesPhotodetectors, solar cells
In₂S₃Wider bandgapBuffer layers in photovoltaics
GaSeStrong nonlinear optical propertiesPhotonics
CdSeHigh quantum efficiencyLEDs, quantum dots

FAQ

QuestionAnswer
What sputtering method is recommended?RF magnetron sputtering is typically used due to the semiconducting nature of In₂Se₃.
Can the target be supplied with a backing plate?Yes, copper backing plates are available for improved heat dissipation.
Are different crystalline phases important?Yes, deposition conditions can influence phase formation, affecting film properties.
Is customization available?Yes, size, purity, and bonding options can be tailored.
What industries use In₂Se₃ most?Semiconductor, optoelectronics, and energy research industries.

Packaging

Our Indium (III) Selenide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.


Conclusion

Indium (III) Selenide sputtering targets provide a versatile and high-performance solution for advanced thin film applications. With tunable electronic properties, excellent film-forming capabilities, and customizable configurations, they are an ideal choice for cutting-edge research and industrial applications in optoelectronics and energy technologies.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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InSe target 4N 2"×3 mm In Bonded 2 mm Cu B/Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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