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Iron Carbide Sputtering Target

ST0224 Iron Carbide Sputtering Target, Fe3C

Chemical Formula: Fe3C
Catalog Number: ST0224
CAS Number: 12011-67-5
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Iron Carbide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Iron Carbide Sputtering Target Description

Iron Carbide sputtering targets from TFM are high-quality carbide ceramic materials with the chemical formula Fe3C. Iron carbide, also known as cementite, is widely used in various applications due to its hardness and wear resistance. This material is commonly utilized in thin film deposition processes for applications in the semiconductor, display, LED, and photovoltaic industries, as well as for decorative and protective coatings.

ironIron, also known as ferrum, is a chemical element with a rich history, dating back to its early use before 5000 BC. The name “iron” comes from the Anglo-Saxon word “iren,” while its Latin name “ferrum” is reflected in its chemical symbol “Fe.” Iron is a transition metal located in Period 4 and Group 8 of the periodic table, within the d-block. It has an atomic number of 26 and a relative atomic mass of 55.845(2) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: Iron Sputtering Target

CarbonCarbon, a chemical element symbolized as “C,” derives its name from the Latin word ‘carbo,’ meaning charcoal. This element has been known and utilized since around 3750 BC, with early uses attributed to the Egyptians and Sumerians. Carbon has an atomic number of 6 and is located in Period 2 and Group 14 of the periodic table, within the p-block. Its relative atomic mass is 12.0107(8) Dalton, with the number in brackets indicating the uncertainty of this measurement.

Iron Carbide Sputtering Target Specification

Compound Formula Fe3C
Molecular Weight 179.55
Appearance Solid
Melting Point 1227 °C (2241 °F)
Density 7.694 g/cm3

Iron Carbide Sputtering Target Packing

Our iron carbide sputtering targets are meticulously tagged and labeled externally to guarantee easy identification and strict quality control. We take great care in handling and packaging to prevent any damage during storage or transportation, ensuring that the targets arrive in perfect condition for use.

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TFM offers Iron Carbide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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