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Iron Germanium Telluride Sputtering Target, Fe₅GeTe₂

Iron Germanium Telluride (Fe₅GeTe₂) Sputtering Target

 

Overview
Iron Germanium Telluride (Fe₅GeTe₂) is a layered transition metal chalcogenide with remarkable magnetic and electronic properties. As a member of the van der Waals (vdW) magnetic material family, Fe₅GeTe₂ has attracted significant attention in spintronics and 2D magnetism research. Its high Curie temperature, tunable magnetic anisotropy, and stability in thin-film form make it an ideal material for advanced magnetic and optoelectronic devices.

Key Properties

  • Chemical Formula: Fe₅GeTe₂

  • Purity: ≥ 99.9% (3N)

  • Crystal Structure: Hexagonal layered (vdW structure)

  • Magnetic Properties: High Curie temperature (> 270 K), ferromagnetic ordering

  • Electronic Properties: Metallic conductivity with tunable magnetic anisotropy

  • Film Quality: Supports epitaxial growth for atomically thin layers

Typical Applications

  • Spintronic devices (spin valves, magnetic tunnel junctions)

  • 2D magnetism research for next-generation data storage

  • Magneto-optical devices

  • Fundamental condensed matter physics studies

  • Layered heterostructures with other 2D materials

Example Specification

  • Material: Iron Germanium Telluride (Fe₅GeTe₂)

  • Purity: 99.9% (3N)

  • Size: Diameter 1″ × Thickness 3 mm

  • Bonding: Available unbonded or bonded to copper backing plate

  • Deposition Method: RF or DC Magnetron Sputtering

Handling and Storage

Store in an inert atmosphere (argon or vacuum-sealed) to minimize oxidation. Avoid prolonged exposure to air and moisture. Handle with gloves in a clean environment to ensure film purity during deposition.

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Fe₅GeTe₂ Target 3N 1"*3mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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