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ST0501 Lead Selenide Telluride Sputtering Target, Pb/Se/Te

Chemical Formula: Pb/Se/Te
Catalog Number: ST0501
CAS Number: 12412-93-0
Purity: 99%~99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Lead Selenide Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Lead Selenide Telluride Sputtering Target Description

leadLead, known as plumbum in Latin and derived from the Anglo-Saxon word for lead, has been used since around 7000 BC. It was discovered by ancient Near Eastern civilizations. Represented by the symbol “Pb” and with an atomic number of 82, lead is located in Period 6 and Group 14 of the periodic table, within the p-block. Its relative atomic mass is 207.2(1) Dalton, with the number in brackets reflecting the uncertainty of this value.

 

Selenium

Selenium is a chemical element named after the Moon, derived from the Greek word *selene*. It was first identified in 1817 by J. Berzelius and G. Gahn, with its isolation later confirmed by the same scientists. The symbol for selenium is “Se,” and it holds the atomic number 34. It is positioned in Period 4 and Group 16 of the periodic table, within the p-block. Selenium’s relative atomic mass is 78.96(3) Dalton, with the number in brackets denoting the level of uncertainty.

TelluriumTellurium is a chemical element named after Earth, from the Latin word *tellus*. It was first mentioned in 1782 by F.-J.M. von Reichenstein, and its isolation was later achieved and reported by H. Klaproth. The symbol for tellurium is “Te,” and it has an atomic number of 52. It is located in Period 5 and Group 16 of the periodic table, within the p-block. The relative atomic mass of tellurium is 127.60(3) Dalton, with the number in brackets representing the uncertainty.

Related Products: Lead Sputtering Target, Selenium Sputtering Target, Tellurium Sputtering Target.

Lead Selenide Telluride Sputtering Target Specifications

Material TypeLead Selenide Telluride
SymbolPb/Se/Te
Color/AppearanceGray metallic solid in various forms
Melting Point/
Density/
Available SizesDia.: 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Lead Selenide Telluride Sputtering Target Application

The Lead Selenide Telluride Sputtering Target is utilized in a variety of applications including thin film deposition, decorative coatings, semiconductor fabrication, display technologies, LED and photovoltaic devices, and functional coatings. It also plays a role in the optical information storage industry, glass coating for automotive and architectural applications, and optical communication systems.

Packing

Our Lead Selenide Telluride Sputtering Targets are meticulously tagged and labeled on the exterior to guarantee easy identification and rigorous quality control. We take exceptional care to prevent any potential damage during storage and transportation, ensuring that each target reaches you in optimal condition.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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