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ST0877 Lithium Germanium Phosphorus Sulfide Sputtering Target

Chemical Formula: LGPS
Catalog Number: ST0877
Purity: 99.9% ~99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

lithium germanium phosphorus sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Lithium Germanium Phosphorus Sulfide Sputtering Target Description

LithiumLithium germanium phosphorus sulfide sputtering target is a white sputtering material with the element Li, Ge, P and S.

Lithium is a chemical element derived from the Greek word ‘lithos’, meaning stone. First mentioned in 1817 by A. Arfwedson and isolated by W. T. Brande, it is represented by the symbol ‘Li’. With an atomic number of 3, lithium is located in Period 2, Group 1 of the periodic table, and belongs to the s-block. Its relative atomic mass is 6.941(2) Dalton, with the number in brackets indicating uncertainty.

Related: Lithium Sputtering Target

GermaniumGermanium is a chemical element named after Germany (from the Latin ‘Germania’). It was first mentioned in 1886 by A. Winkler. Represented by the symbol ‘Ge’, it has an atomic number of 32 and is located in Period 4, Group 14 of the periodic table, belonging to the p-block. The relative atomic mass of germanium is 72.64(1) Dalton, with the number in brackets indicating uncertainty.

Related: Germanium Sputtering Target

PhosphorusPhosphorus is a chemical element derived from the Greek word ‘phosphoros’, meaning ‘bringer of light’. It was first identified in 1669 by H. Brand, who also accomplished its isolation. The symbol for phosphorus is ‘P’, and it has an atomic number of 15, positioned in Period 3, Group 15 of the periodic table, within the p-block. Its relative atomic mass is 30.973762(2) Dalton, with the number in brackets representing the uncertainty.

Sulfur

Sulfur, also spelled sulphur, is a chemical element with origins in either the Sanskrit word ‘sulvere’ or the Latin ‘sulfurium’. It has been used since before 2000 BC and was discovered independently by ancient Chinese and Indian civilizations. The    chemical symbol for sulfur is ‘S’, with an atomic number of 16. It is located in Period 3, Group 16 of the periodic table, and belongs to the p-block. The relative atomic mass of sulfur is 32.065(5) Dalton, with the number in brackets indicating the uncertainty.

Lithium Germanium Phosphorus Sulfide Sputtering Target Specification

Material TypeLithium Germanium Phosphorus Sulfide
SymbolLGPS
Color/AppearanceWhite Solid
Available SizesDia.: 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Lithium Germanium Phosphorus Sulfide Sputtering Target Packing

Our lithium germanium phosphorus sulfide sputtering targets are clearly tagged and labeled externally for efficient identification and quality control. We take great care to prevent any damage during storage or transportation.

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TFM offers lithium germanium phosphorus sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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