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ST0977 Manganese Gallium Sputtering Target, Mn-Ga

Chemical FormulaMn-Ga
Catalog No.ST0977
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Renowned for their exceptional purity and competitive pricing, Manganese-Gallium sputtering targets from TFM stand as a testament to excellence. Our extensive expertise in materials science, combined with meticulous craftsmanship, guarantees that these targets not only meet but surpass expectations, providing superior performance and consistent reliability.

MSDS File

Manganese Gallium Sputtering Target Description

Manganese-Gallium sputtering targets are distinguished by their exceptional purity, ensuring reliable and high-purity performance in thin film preparation. Their impressive electrical properties, particularly beneficial in the semiconductor industry, make them ideal for thin film deposition processes. The alloy of manganese and gallium provides excellent chemical stability, maintaining their integrity throughout various thin film deposition procedures. The unique properties of Manganese-Gallium sputtering targets highlight their importance in applications requiring precise and dependable thin film characteristics.

Related Product: Manganese Sputtering Target, Manganese Oxide Sputtering Target

Manganese Gallium Sputtering Target Specifications

Compound FormulaMn-Ga
AppearanceSilver Grey Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Manganese Gallium Sputtering Target Handling Notes

Indium bonding is recommended for Manganese-Gallium sputtering targets due to their inherent characteristics, such as brittleness and low thermal conductivity, which can affect sputtering performance. The low thermal conductivity and susceptibility to thermal shock of this material make indium bonding a suitable choice to enhance stability and effectiveness during the sputtering process.

Manganese Gallium Sputtering Target Application

In semiconductor manufacturing, Manganese-Gallium sputtering targets are essential due to their excellent electrical properties, making them crucial for thin film deposition. They support the production of high-performance electronic components and integrated circuits.

These targets also excel in magnetic thin film preparation, thanks to the alloy combination of manganese and gallium. They are highly effective in applications such as magnetic storage, sensors, and other magnetic devices, demonstrating remarkable performance across these areas.

In optical coatings, Manganese-Gallium sputtering targets are valued for their unique physical and chemical properties. They are instrumental in creating thin films with specialized optical characteristics, such as those used in filters and lenses.

Furthermore, in the electronics sector, these targets are vital for the manufacture of electronic devices. They enhance the performance and stability of electronic components through effective thin film preparation. The broad applications of Manganese-Gallium sputtering targets highlight their critical role in advancing technology and supporting various industrial applications.

Manganese Gallium Sputtering Target Packaging

Our Manganese-Gallium sputtering targets are meticulously managed during storage and transportation to ensure they maintain their quality and arrive in optimal condition.

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TFM’s Manganese-Gallium sputtering targets are offered in a range of forms, purities, and sizes. We specialize in manufacturing high-purity physical vapor deposition (PVD) materials with maximum density and minimal average grain sizes. These targets are designed for use in semiconductor applications, as well as in chemical vapor deposition (CVD) and PVD for display and optical technologies.

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Manganese Gadolinium (Mn:Ga = 50%:50%), Diameter 50.8*Height 2.5mm (+/-0.1mm), Manganese Gadolinium (Mn:Ga = 50%:50%), Diameter 50.8*Height 5mm (+/-0.1mm)

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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