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ST0978 Manganese Tin Sputtering Target, MnSn

Chemical FormulaMn-Ga
Catalog No.ST0977
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

TFM offers high-quality, cost-effective Manganese-Tin sputtering targets. Renowned for our excellence, our targets adhere to industry standards and provide a dependable solution for thin film deposition. With our competitive pricing, these sputtering targets are an ideal choice for a wide range of high-tech applications.

MSDS File

Manganese Tin Sputtering Target Description

Manganese-Tin sputtering targets are distinguished by their exceptional performance, particularly within the semiconductor and electronics industries. These targets are renowned for their outstanding electrical properties, making them ideal for thin film deposition processes and ensuring reliable, efficient manufacturing of electronic components.

The alloy of manganese and tin provides remarkable chemical stability, maintaining consistency throughout the thin film preparation process. This unique combination not only offers excellent chemical stability but also allows for adjustable physical properties. This adaptability makes Manganese-Tin sputtering targets versatile for a wide range of thin film deposition applications.

Their ability to precisely control physical properties enhances the performance and functionality of thin films across various high-tech industries, including electronics and semiconductors. Manganese-Tin sputtering targets are essential for supporting advancements in these fields, contributing significantly to the development of cutting-edge technologies.

Related Product: Manganese Sputtering Target, Manganese Oxide Sputtering Target

Manganese Tin Sputtering Target Specifications

Compound FormulaMnSn
AppearanceGrey Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Manganese Tin Sputtering Target Handling Notes

Indium bonding is recommended for Manganese-Tin sputtering targets due to their characteristics that can pose challenges during sputtering, such as brittleness and low thermal conductivity. This material’s low thermal conductivity and susceptibility to thermal shock make indium bonding a suitable choice to improve stability and performance during the sputtering process.

Manganese Tin Sputtering Target Application

Semiconductor Manufacturing: Manganese-Tin sputtering targets are highly valued in the semiconductor industry for their excellent electrical properties, making them ideal for thin film deposition. They facilitate the efficient preparation of electronic components and integrated circuits.

Magnetic Thin Film Preparation: The combination of manganese and tin in these targets is particularly effective for creating magnetic thin films, which are essential for applications in magnetic storage, sensors, and other magnetic devices.

Electronic Device Manufacturing: In the production of electronic devices, Manganese-Tin sputtering targets are extensively used to prepare thin films that enhance the performance and stability of electronic components.

Optical Applications: These targets are crucial in the production of optical coatings, enabling the creation of thin films with specialized optical properties for applications such as filters and lenses.

Manganese Tin Sputtering Target Packaging

Our Manganese-Tin sputtering targets are meticulously managed throughout storage and transportation to ensure they retain their quality and arrive in optimal condition.

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TFM’s Manganese-Tin sputtering targets are available in a range of forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with maximum density and minimal average grain sizes. These targets are designed for use in semiconductor applications, as well as in chemical vapor deposition (CVD) and PVD for display and optical technologies.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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