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ST0101 Nickel Chromium Silicon Sputtering Target, Ni/Cr/Si

Chemical Formula: Ni/Cr/Si
Catalog Number: ST0101
CAS Number: 7440-02-0 | 7440
Purity: 99.9%, 99.95%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Nickel Chromium Silicon sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Nickel Chromium Silicon Sputtering Target Description

The Nickel Chromium Silicon Sputtering Target from TFM is an alloy material composed of nickel (Ni), chromium (Cr), and silicon (Si). This high-quality sputtering material is designed for applications that benefit from the combined properties of these three elements.

Nickel

Nickel, symbolized as “Ni,” is a chemical element whose name is derived from the shortened German term ‘kupfernickel,’ meaning either devil’s copper or St. Nicholas’s copper. It was first mentioned and observed by F. Cronstedt in 1751, who also accomplished its isolation. Nickel has an atomic number of 28 and is located in Period 4, Group 10 of the d-block in the periodic table. Its relative atomic mass is 58.6934(2) Daltons, with the number in brackets indicating the measurement uncertainty.

Related Product: Nickel Sputtering Target

Chromium

Chromium, symbolized as “Cr,” is a chemical element whose name originates from the Greek word ‘chroma,’ meaning color. Known and used since before 1 AD, it was notably discovered in connection with the Terracotta Army. Chromium has an atomic number of 24 and is located in Period 4, Group 6 of the d-block in the periodic table. Its relative atomic mass is 51.9961(6) Daltons, with the number in brackets indicating the measurement uncertainty.

Related Product: Chromium Sputtering Target

Silicon

Silicon, symbolized as “Si,” is a chemical element whose name originates from the Latin words ‘silex’ or ‘silicis,’ meaning flint. It was first mentioned and observed by J. Berzelius in 1824, who also accomplished its isolation. Silicon has an atomic number of 14 and is located in Period 3, Group 14 of the p-block in the periodic table. Its relative atomic mass is 28.0855(3) Daltons, with the number in brackets indicating the measurement uncertainty.

Related Product: N-type Silicon Sputtering Target

Nickel Chromium Silicon Sputtering Target Application

The Nickel Chromium Silicon Sputtering Target is widely used for thin film deposition in various industries. Its applications include decoration, semiconductors, displays, LED and photovoltaic devices, and functional coatings. Additionally, it is utilized in the optical information storage industry, glass coating for car and architectural glass, optical communication, and other related fields.

Nickel Chromium Silicon Sputtering Target Packing

Our Nickel Chromium Silicon Sputtering Targets are meticulously handled to prevent any damage during storage and transportation. This careful handling ensures that our products maintain their original quality and arrive in perfect condition.

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TFM offers Nickel Chromium Silicon Sputtering Targets in various forms, purities, sizes, and price points. We specialize in high-purity thin film deposition materials, featuring optimal density and minimal grain sizes. These materials are ideal for semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) applications in display and optics industries. For current pricing on sputtering targets and other deposition materials not listed, please contact us.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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