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Pyrolytic Graphite Sputtering Targets

MSDS File
Material TypePyrolytic Graphite
SymbolC
Atomic Weight12.0107
Atomic Number6
Color/AppearanceBlack, Non-Metallic
Thermal Conductivity140 W/m.K
Melting Point (°C)~3,652
Coefficient of Thermal Expansion7.1 x 10-6/K
Theoretical Density (g/cc)2.25
Z Ratio3.26
SputterPDC
Max Power Density*
(Watts/Square Inch)		80
Type of BondIndium, Elastomer
CommentsE-beam preferred. Arc evaporation. Poor film adhesion.

Overview of Pyrolytic Graphite Sputtering Targets (C)

Introduction to Pyrolytic Graphite Sputtering Targets

Pyrolytic graphite sputtering targets, symbolized as “C,” are superior to standard carbon graphite targets in terms of directionality and sputtering rate. These targets are produced using Chemical Vapor Deposition (CVD), which allows the material to be grown atom-by-atom, enhancing its thermal, electrical, and chemical properties. The CVD process results in near-theoretical density, making the material essentially non-porous and enabling quick outgassing. Pyrolytic graphite is ideal for high-performance applications requiring enhanced material properties.

Key Properties of Pyrolytic Graphite Sputtering Targets

  • Material Type: Pyrolytic Graphite
  • Symbol: C
  • Atomic Weight: 12.0107
  • Atomic Number: 6
  • Appearance: Black, non-metallic
  • Thermal Conductivity: 140 W/m.K
  • Melting Point: ~3,652°C
  • Coefficient of Thermal Expansion: 7.1 × 10⁻⁶/K
  • Density: 2.25 g/cc
  • Z Ratio: 3.26
  • Sputtering Method: PDC
  • Max Power Density: 80 W/in²
  • Bonding Options: Indium, Elastomer

Manufacturing Process

  1. Refining: Using a three-layer electrolytic process to achieve high purity.
  2. Melting and Casting: Semi-continuous casting in an electrical resistance furnace.
  3. Grain Refinement: Engineered microstructure through thermomechanical treatment.
  4. Final Packaging: Cleaned for vacuum use and protected from environmental contaminants during shipment.

Product Specifications

  • Purity: 99.99%
  • Circular Dimensions: Up to 14-inch diameter, minimum 1 mm thickness.
  • Block Dimensions: Up to 32-inch length, 12-inch width, minimum 1 mm thickness.

Features and Benefits

  • High Purity: Ensures excellent performance in demanding applications.
  • Refined Grain Structure: Provides superior sputtering characteristics.
  • Competitive Pricing: Offers cost-effective solutions for various industries.
  • Semiconductor Grade: Perfect for semiconductor and electronic applications.

Applications

Pyrolytic graphite sputtering targets are used in:

  • Electronics
  • Semiconductor Manufacturing
  • Flat Panel Displays

Additional Options

  • Carbide Targets: Including Boron Carbide, Hafnium Carbide, Molybdenum Carbide, and others.
  • Bonding Services: Available with Indium and elastomer bonding options.

Inquiry Form

Required Information

  • Name
  • Email ID
  • Company Name
  • Industry

Optional Information

  • Phone Number
  • Address
  • Country
  • Details About Material Requirements

 

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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