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ST0186 Silicon Monoxide Sputtering Target, SiO

Chemical Formula: SiO
Catalog Number: ST0186
CAS Number: 10097-28-6
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Silicon Monoxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Silicon Monoxide Sputtering Target Description

Silicon Monoxide Sputtering Target from TFM is an oxide sputtering material containing Si and O.

Related Product: Silicon Dioxide Sputtering Target

SiliconSilicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius, who also accomplished its isolation. “Si” is the canonical chemical symbol of silicon. It has an atomic number of 14 and is located in Period 3, Group 14 of the periodic table, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, with the number in brackets indicating the uncertainty. Silicon is a fundamental component in the semiconductor industry, widely used in electronic devices and integrated circuits.

OxygenOxygen is a chemical element that originated from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first mentioned in 1771 and observed by W. Scheele. The isolation was later accomplished and announced by Scheele. The chemical symbol for oxygen is “O.” It has an atomic number of 8 and is located in Period 2, Group 16 of the periodic table, belonging to the p-block. The relative atomic mass of oxygen is 15.9994(3) Dalton, with the number in brackets indicating the measurement uncertainty. Oxygen is essential for respiration in most living organisms and plays a crucial role in combustion and various industrial processes.

Silicon Monoxide Sputtering Target Specification

Compound FormulaSiO
Molecular Weight44.085
Appearanceblack-brown glassy solid
Melting Point1702 °C
Boiling Point1880 °C
Density2.13 g/cm
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Silicon Monoxide Sputtering Target Handling Notes

1. Indium bonding is recommended for the silicon monoxide (SiO) sputtering target due to some of its characteristics that are not conducive to sputtering, such as brittleness and low thermal conductivity.

2. This material has a low thermal conductivity and is susceptible to thermal shock, which can lead to cracking or other damage during processing. Indium bonding helps to mitigate these issues, providing better thermal management and mechanical support.

Silicon Monoxide Sputtering Target Packaging

Our silicon monoxide sputtering target is clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care to avoid any damage that might occur during storage or transportation, maintaining the integrity and quality of the product.

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TFM offers Silicon Monoxide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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