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ST0285 Silicon Sulfide Sputtering Target, SiS2

Chemical Formula: SiS2
Catalog Number: ST0285
CAS Number: 13759-10-9
Purity: 99.5%, 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Silicon Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Silicon Sulfide (SiS₂) sputtering targets are specialized materials used for depositing sulfur-containing silicon thin films in advanced research and functional coating applications. As interest grows in chalcogenide-based materials for optoelectronics, solid-state devices, and infrared technologies, SiS₂ has emerged as a promising candidate due to its unique bonding structure and tunable optical properties. High-quality sputtering targets are essential to ensure compositional accuracy and stable thin film performance.

Detailed Description

Silicon Sulfide (SiS₂) is a chalcogenide compound characterized by a chain-like molecular structure, which differentiates it from oxide-based silicon materials such as SiO₂. This structural feature contributes to its distinct optical bandgap, infrared transparency, and potential semiconducting behavior.

SiS₂ sputtering targets are typically produced through controlled synthesis and consolidation processes to ensure phase purity and uniform composition. Due to the volatile nature of sulfur and the sensitivity of SiS₂ to environmental conditions, manufacturing requires careful atmosphere control to prevent decomposition or contamination.

The target density and microstructure play a critical role in sputtering performance. High-density targets reduce particle generation and enable stable plasma conditions, while uniform grain distribution ensures consistent film deposition. Depending on system requirements, SiS₂ targets can be supplied in bonded or unbonded configurations, with copper or titanium backing plates used to improve heat dissipation during sputtering.

Applications

Silicon Sulfide Sputtering Targets are used in a range of advanced and emerging technologies:

  • Chalcogenide Thin Films: For optical and electronic materials research
  • Infrared Optical Coatings: Leveraging transparency in IR regions
  • Semiconductor Research: Exploration of non-oxide silicon compounds
  • Energy Storage & Solid-State Electrolytes: Investigating sulfur-based materials
  • Photonic Devices: Thin films for waveguides and optical components

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaSiS₂Defines compound structure
Purity≥ 99.9% (3N)Ensures film consistency and performance
Density≥ 95% theoretical densityImproves sputtering stability
Diameter25 – 150 mm (custom)Compatible with various sputtering systems
Thickness3 – 6 mmInfluences deposition rate and lifetime
BondingUnbonded / Cu-backed / Ti-backedEnhances thermal management

Comparison with Related Materials

MaterialKey AdvantageTypical Application
SiS₂Sulfur-based, IR transparencyPhotonics, chalcogenide films
SiO₂Excellent dielectric propertiesInsulating layers, optics
Si₃N₄High mechanical strength & stabilityProtective coatings
GeS₂Broader IR transmission rangeInfrared optics

FAQ

QuestionAnswer
Is SiS₂ stable during sputtering?Yes, under controlled vacuum conditions, it can be sputtered effectively, though process parameters must be optimized due to sulfur volatility.
Can the target be customized?Yes, dimensions, purity, and bonding options can be tailored to specific equipment and applications.
What sputtering method is recommended?RF sputtering is typically preferred for compound ceramic materials like SiS₂.
How should the target be stored?It should be stored in a dry, inert environment to prevent degradation.
What industries use SiS₂ targets?Primarily research institutions, optics, and advanced semiconductor development sectors.

Packaging

Our Silicon Sulfide Sputtering Target, SiS₂, is meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the target arrives in perfect condition.

Conclusion

Silicon Sulfide Sputtering Targets provide a reliable solution for depositing sulfur-based silicon thin films with unique optical and electronic properties. With controlled composition, high density, and customizable configurations, they are well-suited for cutting-edge research and specialized industrial applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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