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ST0267 Tantalum Silicide Sputtering Target, TaSi2

Chemical Formula: TaSi2
Catalog Number: ST0267
CAS Number: 12039-79-1
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tantalum Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Tantalum Silicide Sputtering Target

Introduction

The Tantalum Silicide (TaSi₂) Sputtering Target is a specialized material widely used in thin film deposition technologies. It combines the high melting point and chemical stability of tantalum with the semiconducting properties of silicon, making it highly valuable in microelectronics, thin film coatings, and advanced R&D applications.

Detailed Description

Tantalum silicide is an intermetallic compound known for its excellent thermal stability, strong electrical conductivity, and compatibility with semiconductor processes. When used as a sputtering target, it produces uniform, high-purity films that are essential for reliable device fabrication. Typical targets are fabricated through hot pressing or vacuum sintering, ensuring high density and minimal porosity to improve sputtering performance.

  • Material: TaSi₂ (Tantalum Silicide)

  • Purity: Available in 99.5%–99.9%

  • Density: ≥ 95% of theoretical density

  • Shape: Circular, rectangular, or custom shapes

  • Bonding: Elastomer or indium bonding to copper backing plates available for better heat dissipation

Applications

  • Microelectronics: Gate electrodes, diffusion barriers, and interconnects

  • Semiconductors: Thin conductive films in IC and MEMS devices

  • Display Technologies: Used in thin film transistor (TFT) and optoelectronic device fabrication

  • Research & Development: Advanced material studies in electronics, nanotechnology, and coatings

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.5% – 99.9%High purity ensures reliable thin film performance
Density≥ 95% T.D.Reduces porosity, improves film uniformity
Diameter25 – 300 mm (custom)Fits various sputtering systems
Thickness3 – 6 mmAffects sputtering rate and film stability
BondingCu backing with indium/elastomerEnhances thermal management and target life

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Tantalum Silicide (TaSi₂)Excellent conductivity & high temp stabilitySemiconductor interconnects, barrier layers
Tantalum (Ta)Superior corrosion resistanceCapacitors, barrier layers
Silicon (Si)Semiconductor compatibilityIntegrated circuits, optoelectronics

FAQ

QuestionAnswer
Can the target be customized?Yes, we provide custom sizes, shapes, and bonding options.
What is the delivery time?Typically 2–3 weeks depending on quantity and specifications.
How are the targets packaged?Vacuum-sealed, with protective foam in export-ready crates.
What bonding options are available?Indium bonding or elastomer bonding on copper plates.
Which industries use TaSi₂ targets?Mainly semiconductor, microelectronics, display, and R&D labs.

Packaging

Each Tantalum Silicide Sputtering Target is vacuum-sealed and clearly labeled to maintain quality and traceability. Foam-lined cartons or wooden crates are used to prevent damage during storage and international transport.

Conclusion

The Tantalum Silicide (TaSi₂) Sputtering Target is a reliable material for high-performance thin film deposition, offering stability, conductivity, and compatibility with advanced semiconductor processes. With customizable specifications and strict quality control, it is an ideal choice for research institutions and industrial applications.

For detailed specifications and a quotation, please contact us at [sales@thinfilmmaterials.com].

Related Product: Tantalum Sputtering Target

 

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TaSi2 TRG 3N ø3"*1/8", Elastomer Bonded to 1/8" Copper Backing Plate, TaSi₂ target 99.9% Ø3"×1/8" Elastomer Bonded Cu BP + Keeper

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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