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ST0267 Tantalum Silicide Sputtering Target, TaSi2

Chemical Formula: TaSi2
Catalog Number: ST0267
CAS Number: 12039-79-1
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tantalum Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tantalum Silicide Sputtering Target Description

Tantalum silicide sputtering target is a specialized ceramic material made up of tantalum and silicon, used primarily for thin film deposition in various high-tech applications. This material is known for its high melting point, hardness, and good electrical conductivity, making it suitable for use in the semiconductor industry, particularly in the manufacturing of integrated circuits and microelectronics.

TantalumTantalum is a chemical element named after King Tantalus, a figure from Greek mythology. It was first identified in 1802 by Swedish chemist Anders Gustaf Ekeberg. The element is represented by the symbol “Ta” on the periodic table and has an atomic number of 73. Tantalum is located in Period 6 and Group 5, belonging to the d-block of elements. It has a relative atomic mass of 180.94788(2) Daltons, with the number in brackets indicating the uncertainty in its measurement.

Related Product: Tantalum Sputtering Target

SiliconSilicon is a chemical element with its name derived from the Latin words ‘silex’ or ‘silicis,’ meaning flint. It was first described in 1824 by the Swedish chemist Jöns Jakob Berzelius, who also successfully isolated the element. Silicon is represented by the symbol “Si” on the periodic table and has an atomic number of 14. It is situated in Period 3 and Group 14, within the p-block of elements. The relative atomic mass of silicon is 28.0855(3) Daltons, with the number in brackets indicating the uncertainty in its value.

Tantalum Silicide Sputtering Target Application

The tantalum silicide sputtering target is utilized in a variety of applications including thin film deposition, decoration, semiconductors, displays, LEDs, and photovoltaic devices. It is also employed in functional coatings and optical information storage industries, as well as in glass coating industries, such as for car glass and architectural glass. Additionally, it plays a role in optical communication technologies.

Tantalum Silicide Sputtering Target Packing

Our tantalum silicide sputtering targets are clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care in handling and packaging these targets to prevent any damage during storage or transportation, ensuring they arrive in pristine condition.

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TFM offers Tantalum Silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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