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ST0270 Zirconium Silicide Sputtering Target, ZrSi2

Chemical Formula: ZrSi2
Catalog Number: ST0270
CAS Number: 12039-90-6
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Zirconium Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Zirconium Silicide Sputtering Target Description

Zirconium silicide sputtering target is a ceramic sputtering material composed of zirconium and silicon. This material is widely used in various high-tech applications, including thin film deposition processes. It is particularly valued for its durability and effectiveness in creating functional coatings, often utilized in semiconductor, display, LED, and photovoltaic devices, as well as in optical and glass coating industries. The combination of zirconium and silicon provides a material with unique electrical and thermal properties, making it suitable for advanced technological applications.

ZirconiumZirconium is a chemical element with the symbol “Zr” and atomic number 40. The name “zirconium” is derived from the Persian word ‘zargun’, meaning gold-colored, reflecting the gemstone zircon, a common mineral source of zirconium. It was first identified in 1789 by the German chemist Martin Heinrich Klaproth and later isolated by Jöns Jakob Berzelius. In the periodic table, zirconium is located in Period 5 and Group 4, belonging to the d-block elements. The element has a relative atomic mass of 91.224(2) Dalton, with the number in parentheses indicating the uncertainty in the measurement.

Related Product: Zirconium Sputtering Target

SiliconSilicon, represented by the symbol “Si” and atomic number 14, is a chemical element that derives its name from the Latin word ‘silex’ or ‘silicis’, meaning flint. It was first identified and isolated in 1824 by the Swedish chemist Jöns Jakob Berzelius. Silicon is located in Period 3 and Group 14 of the periodic table, classified as a member of the p-block elements. The element has a relative atomic mass of 28.0855(3) Dalton, with the value in parentheses indicating the uncertainty in the measurement. Silicon is widely known for its role in electronics, particularly as a fundamental material in semiconductors.

Zirconium Silicide Sputtering Target Specification

Compound FormulaZrSi2
Molecular Weight147.4
AppearanceGray Target
Density4.88 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Zirconium Silicide Sputtering Target Application

The zirconium silicide sputtering target is widely utilized in various industrial applications. It is primarily used for thin film deposition processes, including applications in the semiconductor, display, LED, and photovoltaic device industries. This material is also employed for decorative coatings and functional coatings, providing durability and specific properties to surfaces. Additionally, zirconium silicide is used in the optical information storage industry and for coating glass in automotive and architectural applications, enhancing both aesthetic and functional qualities. Its applications extend to optical communication technologies, benefiting from its reliable performance in these specialized fields.

Zirconium Silicide Sputtering Target Packing

Our zirconium silicide sputter targets are carefully tagged and labeled externally to ensure easy identification and strict quality control. We take great care in handling and packaging these targets to prevent any damage during storage or transportation, ensuring they arrive in perfect condition.

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TFM offers Zirconium Silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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